Part Details for BZV86-1V4AMO by NXP Semiconductors
Overview of BZV86-1V4AMO by NXP Semiconductors
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Applications
Consumer Electronics
Energy and Power Systems
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Part Details for BZV86-1V4AMO
BZV86-1V4AMO CAD Models
BZV86-1V4AMO Part Data Attributes
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BZV86-1V4AMO
NXP Semiconductors
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Datasheet
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BZV86-1V4AMO
NXP Semiconductors
DIODE SILICON, STABISTOR DIODE, Stabistor Diode
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | O-LALF-W2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | DIFFERENTIAL RESISTANCE IS 20 OHMS | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | STABISTOR DIODE | |
| Forward Voltage-Max (VF) | 1.5 V | |
| Forward Voltage-Min (VF) | 1.3 V | |
| JESD-30 Code | O-LALF-W2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Power Dissipation-Max | 0.33 W | |
| Qualification Status | Not Qualified | |
| Reverse Test Voltage | 5 V | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL |