CFH800
Description: RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, MINIATURE, SC-70, 4 PIN

Overview of CFH800 by Qorvo

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy Automotive

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Part Data Attributes for CFH800 by Qorvo

CFH800
Qorvo
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
QORVO INC
Package Description
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW NOISE
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
5.5 V
Drain Current-Max (ID)
0.16 A
FET Technology
HIGH ELECTRON MOBILITY
Highest Frequency Band
S BAND
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Gain-Min (Gp)
15 dB
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. CFH800
    Qorvo
    RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, MINIATURE, SC-70, 4 PIN
    VS

Alternate Parts for CFH800

This table gives cross-reference parts and alternative options found for CFH800. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFH800, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
CFH800 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, Infineon Technologies AG CFH800 vs CFH800
Part Number Description Manufacturer Compare
NE72218-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group CFH800 vs NE72218-58
NE72218-T2-57 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group CFH800 vs NE72218-T2-57
NE72218-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd CFH800 vs NE72218-58
MGF4919E RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN Mitsubishi Electric CFH800 vs MGF4919E
NE72218-T1-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd CFH800 vs NE72218-T1-58
CFY30 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, Qorvo CFH800 vs CFY30
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group CFH800 vs NE425S01-T1B
NE434S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group CFH800 vs NE434S01-T1B
FHX35LG RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited CFH800 vs FHX35LG
NE76118-T2M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group CFH800 vs NE76118-T2M

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