Datasheets
FHX35LG by:

RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

Part Details for FHX35LG by FUJITSU Semiconductor Limited

Overview of FHX35LG by FUJITSU Semiconductor Limited

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Part Details for FHX35LG

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FHX35LG Part Data Attributes

FHX35LG FUJITSU Semiconductor Limited
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FHX35LG FUJITSU Semiconductor Limited RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Part Life Cycle Code Transferred
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC
Package Description DISK BUTTON, O-CRDB-F4
Pin Count 4
Manufacturer Package Code CASE LG
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer FUJITSU
JESD-30 Code O-CRDB-F4
Number of Terminals 4
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL

Alternate Parts for FHX35LG

This table gives cross-reference parts and alternative options found for FHX35LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE76118-T2K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd FHX35LG vs NE76118-T2K
NE76118-M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd FHX35LG vs NE76118-M
NE425S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd FHX35LG vs NE425S01-T1
NE722S01 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN NEC Compound Semiconductor Devices Ltd FHX35LG vs NE722S01
CFH120-10 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN TriQuint Semiconductor FHX35LG vs CFH120-10
NE76118-M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group FHX35LG vs NE76118-M
FHX35LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited FHX35LG vs FHX35LG
NE76118-T2K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group FHX35LG vs NE76118-T2K
NE434S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group FHX35LG vs NE434S01-T1B
NE72218-T1-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group FHX35LG vs NE72218-T1-58

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