Part Details for FHX35LG by FUJITSU Semiconductor Limited
Overview of FHX35LG by FUJITSU Semiconductor Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FHX35LG
FHX35LG CAD Models
FHX35LG Part Data Attributes
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FHX35LG
FUJITSU Semiconductor Limited
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Datasheet
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FHX35LG
FUJITSU Semiconductor Limited
RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FUJITSU SEMICONDUCTOR AMERICA INC | |
Package Description | DISK BUTTON, O-CRDB-F4 | |
Pin Count | 4 | |
Manufacturer Package Code | CASE LG | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | FUJITSU | |
JESD-30 Code | O-CRDB-F4 | |
Number of Terminals | 4 | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | DISK BUTTON | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | RADIAL |
Alternate Parts for FHX35LG
This table gives cross-reference parts and alternative options found for FHX35LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE76118-T2K | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | FHX35LG vs NE76118-T2K |
NE76118-M | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | FHX35LG vs NE76118-M |
NE425S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Compound Semiconductor Devices Ltd | FHX35LG vs NE425S01-T1 |
NE722S01 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN | NEC Compound Semiconductor Devices Ltd | FHX35LG vs NE722S01 |
CFH120-10 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN | TriQuint Semiconductor | FHX35LG vs CFH120-10 |
NE76118-M | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 | NEC Electronics Group | FHX35LG vs NE76118-M |
FHX35LG | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN | FUJITSU Limited | FHX35LG vs FHX35LG |
NE76118-T2K | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 | NEC Electronics Group | FHX35LG vs NE76118-T2K |
NE434S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | FHX35LG vs NE434S01-T1B |
NE72218-T1-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | FHX35LG vs NE72218-T1-58 |