Part Details for CFY30 by Siemens
Overview of CFY30 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CFY30
CFY30 CAD Models
CFY30 Part Data Attributes
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CFY30
Siemens
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Datasheet
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CFY30
Siemens
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Additional Feature | LOW NOISE | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 5 V | |
Drain Current-Max (ID) | 0.08 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.25 W | |
Power Gain-Min (Gp) | 10 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for CFY30
This table gives cross-reference parts and alternative options found for CFY30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFY30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE76118-K | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 | NEC Electronics Group | CFY30 vs NE76118-K |
NE434S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | CFY30 vs NE434S01-T1 |
NE72218-57 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | CFY30 vs NE72218-57 |
NE425S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | CFY30 vs NE425S01-T1B |
NE434S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | CFY30 vs NE434S01-T1B |
NE72218-T2-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | CFY30 vs NE72218-T2-58 |
FHX13LP | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | FUJITSU Limited | CFY30 vs FHX13LP |
NE72218-T1-57 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | CFY30 vs NE72218-T1-57 |
NE72218-T1-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | CFY30 vs NE72218-T1-58 |
NE425S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | CFY30 vs NE425S01-T1 |