There are no models available for this part yet.
Overview of CM50DU-24F by Mitsubishi Electric
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for CM50DU-24F by Mitsubishi Electric
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
73K1942
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Newark | Igbt Module, 1.2Kv, 50A, Continuous Collector Current:50A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:320W, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Mitsubishi Electric CM50DU-24F RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now |
CAD Models for CM50DU-24F by Mitsubishi Electric
Part Data Attributes for CM50DU-24F by Mitsubishi Electric
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|
|---|---|
|
Pbfree Code
|
No
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|
Rohs Code
|
No
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Part Life Cycle Code
|
Obsolete
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|
Ihs Manufacturer
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MITSUBISHI ELECTRIC CORP
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Reach Compliance Code
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unknown
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ECCN Code
|
EAR99
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Case Connection
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ISOLATED
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Collector Current-Max (IC)
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50 A
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Collector-Emitter Voltage-Max
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1200 V
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Configuration
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SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC
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Gate-Emitter Voltage-Max
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20 V
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JESD-30 Code
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R-XUFM-X7
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Number of Elements
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2
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Number of Terminals
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7
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Operating Temperature-Max
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150 °C
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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320 W
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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UNSPECIFIED
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Terminal Position
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UPPER
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
|
POWER CONTROL
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Transistor Element Material
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SILICON
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VCEsat-Max
|
2.4 V
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Alternate Parts for CM50DU-24F
This table gives cross-reference parts and alternative options found for CM50DU-24F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM50DU-24F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM50GB120DN2HOSA1 | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | CM50DU-24F vs BSM50GB120DN2HOSA1 |
| MG25Q2YS40 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM50DU-24F vs MG25Q2YS40 |
| MG75Q2YS50 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM50DU-24F vs MG75Q2YS50 |
| C67076-A2106-A70 | Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | CM50DU-24F vs C67076-A2106-A70 |
| 2MBI75L-120 | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M216, 7 PIN | Fuji Electric Co Ltd | CM50DU-24F vs 2MBI75L-120 |
| 2MBI50N-120 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M232, 7 PIN | Fuji Electric Co Ltd | CM50DU-24F vs 2MBI50N-120 |
| MG50Q2YS91 | TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM50DU-24F vs MG50Q2YS91 |
| MG50Q2YS50 | TRANSISTOR 78 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM50DU-24F vs MG50Q2YS50 |
| MG75Q2YS42 | TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM50DU-24F vs MG75Q2YS42 |
| BSM50GB120DN2 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | CM50DU-24F vs BSM50GB120DN2 |