Part Details for CSD13385F5 by Texas Instruments
Results Overview of CSD13385F5 by Texas Instruments
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD13385F5 Information
CSD13385F5 by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD13385F5 | Texas Instruments | 12V, N ch NexFET MOSFET™, single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150 | |
| CSD13385F5T | Texas Instruments | 12V, N ch NexFET MOSFET™, single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150 |
Price & Stock for CSD13385F5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
296-47751-2-ND
|
DigiKey | MOSFET N-CH 12V 4.3A 3PICOSTAR Min Qty: 3000 Container: Tape & Reel |
8048 Tape & Reel |
|
$0.1230 / $0.1419 | Buy Now |
|
DISTI #
296-47751-6-ND
|
DigiKey | MOSFET N-CH 12V 4.3A 3PICOSTAR Min Qty: 1 Container: Digi-Reel |
0 Digi-Reel® |
|
$0.1864 / $0.6300 | Buy Now |
|
DISTI #
P02:6590_15780681
|
Arrow Electronics | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 19 Package Multiple: 1 Date Code: 2103 Container: Cut Strips | Asia - 2708 |
|
$0.1044 / $0.3669 | Buy Now |
|
DISTI #
V72:2272_16636597
|
Arrow Electronics | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R COO: Philippines RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2024 Container: Cut Strips | Americas - 1086 |
|
$0.0984 / $0.2709 | Buy Now |
|
DISTI #
595-CSD13385F5
|
Mouser Electronics | MOSFETs 12-V N channel NexF ET power MOSFET si A A 595-CSD13385F5T RoHS: Compliant | 0 |
|
$0.1130 / $0.6300 | Order Now |
|
DISTI #
93861541
|
Verical | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 19 Package Multiple: 1 Date Code: 2103 | Americas - 2708 |
|
$0.1044 / $0.3669 | Buy Now |
|
DISTI #
60909413
|
Verical | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 60 Package Multiple: 1 Date Code: 2024 | Americas - 1086 |
|
$0.0984 / $0.1190 | Buy Now |
|
DISTI #
P02:6590_15780681
|
Arrow Electronics | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 19 Package Multiple: 1 Date Code: 2103 Container: Cut Strips | Asia - 2708 |
|
$0.1044 / $0.3669 | Buy Now |
|
DISTI #
V72:2272_16636597
|
Arrow Electronics | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R COO: Philippines RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2024 Container: Cut Strips | Americas - 1086 |
|
$0.0984 / $0.2709 | Buy Now |
|
DISTI #
93861541
|
Verical | Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 19 Package Multiple: 1 Date Code: 2103 | Americas - 2708 |
|
$0.1044 / $0.3669 | Buy Now |
US Tariff Estimator: CSD13385F5 by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD13385F5 CAD Models
-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
CSD13385F5 Part Data Attributes
|
|
CSD13385F5
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
CSD13385F5
Texas Instruments
Power Field-Effect Transistor, 7.1A I(D), 12V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2016-10-29 | |
| Configuration | Single With Built-In Diode And Resistor | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 38 Pf | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Chip Carrier | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Pulsed Drain Current-Max (IDM) | 41 A | |
| Surface Mount | Yes | |
| Terminal Finish | Nickel/Gold (Ni/Au) | |
| Terminal Form | No Lead | |
| Terminal Position | Bottom | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Resources and Additional Insights for CSD13385F5
Reference Designs related to CSD13385F5
-
Low-power option for smart meter wireless module using primary cells reference design
This reference design showcases three different power architectures for smart flow meters with lithium manganese dioxide (LiMnO2) primary batteries and commercial off-the-shelf narrowband modules for Internet of Things (IoT)-related applications. The three power solutions are combined with the Battery and System Health Monitoring of Battery Powered Smart Flow Meters Reference Design hardware: which provides highly-accurate State-of-Health (SOH) calculation for the battery lifetime. The always-on in-system current monitoring detects the current peak of the RF transmission and the SOH measurement is scheduled afterwards with an adjustable delay. High-efficiency power architectures for supplying narrowband cellular modules for IoT-related applications with the BQ35100 battery gauge delivers real-time battery life data enabling on-demand battery replacement.
CSD13385F5 Frequently Asked Questions (FAQ)
-
A good PCB layout for the CSD13385F5 involves keeping the analog and digital grounds separate, using a solid ground plane, and minimizing the length of the traces connected to the device's pins. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.
-
To optimize the POR circuit, ensure that the power supply voltage (VDD) rises slowly and monotonically during power-up. A recommended POR circuit includes a voltage detector with a threshold voltage of around 1.8V, and a capacitor (e.g., 10nF) connected between the VDD pin and the voltage detector input.
-
The recommended clock frequency for the CSD13385F5 is between 10MHz and 40MHz. A higher clock frequency can improve the device's performance, but it also increases power consumption. A lower clock frequency can reduce power consumption, but it may affect the device's accuracy and response time.
-
The IVR output voltage (VREG) is internally regulated to 1.8V. To ensure proper operation, connect a 1uF capacitor between the VREG pin and the analog ground (AGND) pin. Additionally, ensure that the input voltage (VIN) is within the recommended range of 2.7V to 5.5V.
-
To minimize EMI and ensure EMC, use a shielded enclosure, keep the device away from high-frequency sources, and use a common-mode choke or ferrite bead on the power supply lines. Additionally, ensure that the PCB layout is optimized for minimal radiation and that the device is properly grounded.