| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17579Q3A | Texas Instruments | $0.2598 | Power Field-Effect Transistor, 20A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | CSD17579Q3AT vs CSD17579Q3A |
Part Details for CSD17579Q3AT by Texas Instruments
Results Overview of CSD17579Q3AT by Texas Instruments
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (1 option)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Energy and Power Systems
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CSD17579Q3AT Information
CSD17579Q3AT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD17579Q3AT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-38463-1-ND
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DigiKey | MOSFET N-CH 30V 20A 8VSON Min Qty: 1 Container: Cut Tape |
94 Cut Tape |
|
$0.8522 / $1.9900 | Buy Now |
|
DISTI #
296-38463-6-ND
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DigiKey | MOSFET N-CH 30V 20A 8VSON Min Qty: 1 Container: Digi-Reel |
94 Digi-Reel® |
|
$0.8522 / $1.9900 | Buy Now |
|
DISTI #
296-38463-2-ND
|
DigiKey | MOSFET N-CH 30V 20A 8VSON Min Qty: 250 Container: Tape & Reel |
0 Tape & Reel |
|
$0.6400 / $0.7424 | Buy Now |
|
DISTI #
595-CSD17579Q3AT
|
Mouser Electronics | MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A RoHS: Compliant | 264 |
|
$0.5500 / $2.1100 | Buy Now |
|
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Chip Stock | 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm 8-VSONP -55 to 150 | 43781 |
|
RFQ | |
|
|
Win Source Electronics | MOSFET N-CH 30V 35A 8VSON | 5540 |
|
$4.8873 / $7.3309 | Buy Now |
US Tariff Estimator: CSD17579Q3AT by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD17579Q3AT Part Data Attributes
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CSD17579Q3AT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD17579Q3AT
Texas Instruments
Power Field-Effect Transistor, 20A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 14 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0142 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 49 Pf | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 29 W | |
| Pulsed Drain Current-Max (IDM) | 106 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD17579Q3AT
This table gives cross-reference parts and alternative options found for CSD17579Q3AT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17579Q3AT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
CSD17579Q3AT Frequently Asked Questions (FAQ)
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A good PCB layout for the CSD17579Q3AT involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the input traces to reduce noise and parasitic inductance.
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To ensure stability, ensure that the output capacitor is properly sized, the input voltage is within the recommended range, and the device is operated within the recommended temperature range. Additionally, a minimum ESR of 0.1 ohms is recommended for the output capacitor.
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The maximum allowed voltage drop across the CSD17579Q3AT is 3.3V. Exceeding this voltage drop may cause the device to malfunction or fail.
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The CSD17579Q3AT is rated for operation up to 125°C. However, the device's performance and reliability may degrade at high temperatures. It is recommended to derate the device's performance and consider additional thermal management if operating in high-temperature environments.
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To troubleshoot issues with the CSD17579Q3AT, check the input voltage, output voltage, and output current. Verify that the device is properly soldered and that there are no signs of physical damage. Use an oscilloscope to check for noise and oscillations on the output.