| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD18510KTT | Texas Instruments | $1.2511 | Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18510KCS vs CSD18510KTT |
| CSD18510KTTT | Texas Instruments | $1.7882 | Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18510KCS vs CSD18510KTTT |
| BUK9J0R9-40H | Nexperia | Check for Price | Power Field-Effect Transistor, 220A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | CSD18510KCS vs BUK9J0R9-40H |
Part Details for CSD18510KCS by Texas Instruments
Results Overview of CSD18510KCS by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (3 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
CSD18510KCS Information
CSD18510KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD18510KCS | Texas Instruments | 40V, N ch NexFET MOSFET™, single TO-220, 1.7mOhm 3-TO-220 -55 to 175 |
Price & Stock for CSD18510KCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
296-47695-ND
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DigiKey | MOSFET N-CH 40V 200A TO220-3 Min Qty: 1 Container: Tube |
483 Tube |
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$1.0524 / $2.9400 | Buy Now |
|
DISTI #
595-CSD18510KCS
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Mouser Electronics | MOSFETs 40-V N channel NexF ET power MOSFET si RoHS: Compliant | 691 |
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$0.9420 / $2.9400 | Buy Now |
|
DISTI #
CSD18510KCS
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TME | Transistor: N-MOSFET, unipolar, 40V, 200A, Idm: 400A, 250W, TO220-3 Min Qty: 1 | 0 |
|
$1.4100 / $2.6700 | RFQ |
|
|
Chip Stock | 40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm 3-TO-220 -55 to 175 | 7506 |
|
RFQ | |
|
|
Vyrian | Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5802 |
|
RFQ |
US Tariff Estimator: CSD18510KCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD18510KCS CAD Models
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CSD18510KCS Part Data Attributes
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CSD18510KCS
Texas Instruments
Buy Now
Datasheet
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CSD18510KCS
Texas Instruments
Power Field-Effect Transistor, 200A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2017-03-03 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 328 Mj | |
| Case Connection | Drain | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 200 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 551 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD18510KCS
This table gives cross-reference parts and alternative options found for CSD18510KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18510KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
CSD18510KCS Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Ensure the input voltage is within the recommended range (4.5V to 18V), and the output voltage is set correctly using the FB pin. Also, ensure the input capacitor is properly sized and placed close to the device.
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The maximum output current is 10A, but it's recommended to derate the current based on the ambient temperature and PCB thermal design.
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Use an overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit to prevent damage from voltage transients and ensure the device operates within the recommended voltage range.
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A low-ESR ceramic capacitor (e.g., X5R or X7R) with a value between 10uF to 22uF is recommended, depending on the input voltage and output current requirements.