| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD18511KTT | Texas Instruments | $0.8671 | Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18511KTTT vs CSD18511KTT |
Part Details for CSD18511KTTT by Texas Instruments
Results Overview of CSD18511KTTT by Texas Instruments
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (8 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
CSD18511KTTT Information
CSD18511KTTT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD18511KTTT | Texas Instruments | 40V, N ch NexFET MOSFET™, single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175 |
Price & Stock for CSD18511KTTT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
296-47449-6-ND
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DigiKey | MOSFET N-CH 40V 110A/194A DDPAK Min Qty: 1 Container: Digi-Reel |
291 Digi-Reel® |
|
$2.1420 / $3.3100 | Buy Now |
|
DISTI #
296-47449-1-ND
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DigiKey | MOSFET N-CH 40V 110A/194A DDPAK Min Qty: 1 Container: Cut Tape |
291 Cut Tape |
|
$2.1420 / $3.3100 | Buy Now |
|
DISTI #
296-47449-2-ND
|
DigiKey | MOSFET N-CH 40V 110A/194A DDPAK Min Qty: 50 Container: Tape & Reel |
250 Tape & Reel |
|
$1.3954 / $1.6400 | Buy Now |
|
DISTI #
595-CSD18511KTTT
|
Mouser Electronics | MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18511KTT RoHS: Compliant | 0 |
|
$1.1400 / $3.2100 | Order Now |
|
DISTI #
CSD18511KTTT
|
TME | Transistor: N-MOSFET, unipolar, 40V, 110A, Idm: 400A, 188W, D2PAK Min Qty: 1 | 0 |
|
$1.1900 / $2.9000 | RFQ |
|
|
Vyrian | Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5738 |
|
RFQ |
US Tariff Estimator: CSD18511KTTT by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD18511KTTT Part Data Attributes
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CSD18511KTTT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD18511KTTT
Texas Instruments
Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-263-2 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2017-09-15 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 156 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 306 Pf | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 188 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD18511KTTT
This table gives cross-reference parts and alternative options found for CSD18511KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18511KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
CSD18511KTTT Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the CSD18511KTTT is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure the N-channel MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a gate current (Ig) of at least 10mA. This will minimize the on-state resistance (Rds(on)) and ensure optimal performance.
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Place the device close to the power source and use a solid ground plane to reduce inductance. Avoid using vias or narrow traces, and keep the layout symmetrical to reduce electromagnetic interference (EMI).
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To protect the CSD18511KTTT from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection components such as TVS diodes or ESD protection arrays. Avoid touching the device pins or PCB traces, and use ESD-safe packaging and storage materials.
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The maximum allowed drain-source voltage (Vds) for the CSD18511KTTT is 100V. Exceeding this voltage may cause permanent damage to the device.