| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLU3636PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | CSD18533KCS vs IRLU3636PBF |
Part Details for CSD18533KCS by Texas Instruments
Results Overview of CSD18533KCS by Texas Instruments
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD18533KCS Information
CSD18533KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD18533KCS | Texas Instruments | 60V, N ch NexFET MOSFET™, single TO-220, 6.3mOhm 3-TO-220 -55 to 175 |
Price & Stock for CSD18533KCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-35013-ND
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DigiKey | MOSFET N-CH 60V 72A/100A TO220-3 Min Qty: 1 Container: Tube |
0 Tube |
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$0.8599 / $2.4600 | Buy Now |
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DISTI #
595-CSD18533KCS
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Mouser Electronics | MOSFETs 60V N-Chnl NxFT Pwr MSFT .. RoHS: Compliant | 0 |
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$0.7390 / $2.5100 | Order Now |
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DISTI #
CSD18533KCS
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TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 192W, TO220-3 Min Qty: 1 | 0 |
|
$1.0500 / $2.1500 | RFQ |
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Chip Stock | 60-V, N channel NexFET™ power MOSFET, single TO-220, 6.3 mOhm 3-TO-220 -55 to 175 | 2548 |
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RFQ | |
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Vyrian | Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | 7330 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 100A TO220-3 | 6700 |
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$9.5680 / $14.3520 | Buy Now |
US Tariff Estimator: CSD18533KCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD18533KCS CAD Models
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CSD18533KCS Part Data Attributes
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CSD18533KCS
Texas Instruments
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Datasheet
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CSD18533KCS
Texas Instruments
Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated, Logic Level Compatible | |
| Avalanche Energy Rating (Eas) | 135 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 9.1 Pf | |
| JEDEC-95 Code | TO-220 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 192 W | |
| Pulsed Drain Current-Max (IDM) | 293 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD18533KCS
This table gives cross-reference parts and alternative options found for CSD18533KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18533KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Resources and Additional Insights for CSD18533KCS
Reference Designs related to CSD18533KCS
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9.8~13.5-V input: 46-V 300-W output interleave boost reference design
This reference design is a 300-W power output interleaving combination of two boost converters using LM5155 controller. Each converter outputs continuous 150-W and 200-W peak. A LMC555 circuit generates 150k-Hz square wave signal and its anti-phase signal for synchronous clock for the two LM5155: making two converters working with 180 ° phase shift: which helps reduce the output voltage ripple. An amplifier samples input current of the two converters: outputs error signal VC to control slave phase to share current with master phase. There is only 4.6 °C temperature difference between two phases in the thermal result: good current sharing is achieved. Efficiency of the design is higher than 91% at 400-W peak output. Peak to peak ripple is within 250-mV during 200-W to 400-W transient. The design shows a valid way to expand the output power by paralleling two boost converters.
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Power Supply for NB-IoT Modems in Smart Meters with LiSOCl2 Batteries Reference Design
This reference design provides a power supply solution for NB-IoT (Narrow Band -Internet of Things ) in smart meter with LiSOCl2 Batteries applications. The design is a low standby current: high efficiency solution that will extend battery use time more than 50%.
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High-Power (250-W)Boost DC/DC Reference Design for 48-V Output Industrial and Telecom Applications
This high power step-up DC-DC employs a controller with a low gate charge external MOSFET to supply 48V output for loads up to 250 W from a 24-V source.
CSD18533KCS Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the CSD18533KCS is -40°C to 150°C.
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To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range (typically 4.5V to 10V) and ensure the drain-source voltage (VDS) is within the recommended range (typically 10V to 30V).
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The recommended gate resistor value for the CSD18533KCS is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
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To protect the CSD18533KCS from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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The maximum allowable power dissipation for the CSD18533KCS is typically around 30W, depending on the specific package and thermal design.