| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLS3036TRLPBF | Infineon Technologies AG | $2.4385 | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18536KCS vs IRLS3036TRLPBF |
| AUIRLS3036 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18536KCS vs AUIRLS3036 |
| AUIRLS3036 | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18536KCS vs AUIRLS3036 |
| AUIRLS3036TRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18536KCS vs AUIRLS3036TRL |
| AUIRLS3036TRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18536KCS vs AUIRLS3036TRL |
| IRLS3036PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | CSD18536KCS vs IRLS3036PBF |
Part Details for CSD18536KCS by Texas Instruments
Results Overview of CSD18536KCS by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (6 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CSD18536KCS Information
CSD18536KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD18536KCS | Texas Instruments | 60V, N ch NexFET MOSFET™, single TO-220, 1.6mOhm 3-TO-220 -55 to 175 |
Price & Stock for CSD18536KCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
296-47185-ND
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DigiKey | MOSFET N-CH 60V 200A TO220-3 Min Qty: 1 Container: Tube |
1545 Tube |
|
$2.2057 / $5.5900 | Buy Now |
|
DISTI #
595-CSD18536KCS
|
Mouser Electronics | MOSFETs 60-V N channel NexF ET power MOSFET si RoHS: Compliant | 3389 |
|
$2.2500 / $5.8600 | Buy Now |
|
DISTI #
CSD18536KCS
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TME | Transistor: N-MOSFET, unipolar, 60V, 200A, 375W, TO220-3 Min Qty: 1 | 332 |
|
$2.6300 / $4.3400 | Buy Now |
|
|
Chip Stock | 60-V, N channel NexFET™ power MOSFET, single TO-220, 1.6 mOhm 3-TO-220 -55 to 175 | 6651 |
|
RFQ | |
|
|
Win Source Electronics | MOSFET N-CH 60V 200A TO-220-3 | 3000 |
|
$2.6274 / $3.9411 | Buy Now |
US Tariff Estimator: CSD18536KCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD18536KCS CAD Models
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CSD18536KCS Part Data Attributes
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CSD18536KCS
Texas Instruments
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Datasheet
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CSD18536KCS
Texas Instruments
Power Field-Effect Transistor, 349A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 819 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 349 A | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 51 Pf | |
| JEDEC-95 Code | TO-220 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD18536KCS
This table gives cross-reference parts and alternative options found for CSD18536KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18536KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
CSD18536KCS Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the CSD18536KCS is -40°C to 150°C.
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To ensure stability, it's essential to follow the recommended layout and component selection guidelines, including the use of a 10uF ceramic capacitor on the input and a 22uF ceramic capacitor on the output.
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Texas Instruments recommends using a low-ESR ceramic capacitor (X5R or X7R dielectric) with a minimum capacitance of 10uF and a voltage rating of 6.3V or higher.
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While the CSD18536KCS can handle high currents, it's essential to ensure the device is properly heatsinked and the PCB is designed to handle the high currents. Additionally, the input capacitor should be rated for high ripple currents.
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The output voltage of the CSD18536KCS can be calculated using the formula: Vout = (1 + R2/R1) * Vref, where R1 and R2 are the resistors in the feedback network, and Vref is the internal reference voltage (1.2V).