Part Details for CSD18537NKCS by Texas Instruments
Results Overview of CSD18537NKCS by Texas Instruments
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD18537NKCS Information
CSD18537NKCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD18537NKCS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-CSD18537NKCS-ND
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DigiKey | MOSFET N-CH 60V 50A TO220-3 Min Qty: 1 Container: Tube |
2831 Tube |
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$0.4355 / $1.8200 | Buy Now |
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DISTI #
595-CSD18537NKCS
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Mouser Electronics | MOSFETs 60V N-Channel NexFET Pwr MOSFET RoHS: Compliant | 132 |
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$0.4800 / $1.8200 | Buy Now |
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DISTI #
595-CSD18537NKCS
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Mouser Electronics | MOSFETs 60V N-Channel NexFET Pwr MOSFET RoHS: Compliant | 132 |
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$0.4800 / $1.8200 | Buy Now |
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DISTI #
CSD18537NKCS
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TME | Transistor: N-MOSFET, unipolar, 60V, 50A, 94W, TO220-3, 1.14÷1.4mm Min Qty: 1 | 1000 |
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$0.6400 / $1.5700 | Buy Now |
US Tariff Estimator: CSD18537NKCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for CSD18537NKCS
CSD18537NKCS CAD Models
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CSD18537NKCS Part Data Attributes
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CSD18537NKCS
Texas Instruments
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Datasheet
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CSD18537NKCS
Texas Instruments
Power Field-Effect Transistor, 56A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 55 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 5.2 Pf | |
| JEDEC-95 Code | TO-220 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 147 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD18537NKCS
This table gives cross-reference parts and alternative options found for CSD18537NKCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18537NKCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TPN11006NL(TE12L) | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 37A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | CSD18537NKCS vs TPN11006NL(TE12L) |
| TPN11006NL(TE12L1) | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 37A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | CSD18537NKCS vs TPN11006NL(TE12L1) |
Resources and Additional Insights for CSD18537NKCS
Reference Designs related to CSD18537NKCS
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Signal Processing Subsystem and Current Input Based Self Power for Breaker Applications (ACB/MCCB)
THe TIDA-00498 reference design features signal processing front-end and self-power block for electronic trip unit (ETU) used in circuit breakers. A FRAM based micro-controller is used for processing current inputs from signal conditioning amplifiers for 3-phase: neutral and ground current. Two gains are used to extend the range for phase current measurement.This reference design can also self-power using rectified current input. TIDA-00498 is desiged for fast and repeatable tripping (within 30mS) for wide current and temperature range.
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Analog Front End for Motor Electronic Overload Relays with Enhanced Current Range
This reference design is the analog front end (AFE) for an electronic overload relay: used for monitoring and protecting motors from overcurrent or undercurrent events. It is an ideal tool for developers creating overload relays for sensitive AC motors in industrial applications. This programmable gain amplifier (PGA) based analog front end is intended to be an easy evaluation platform for an accurate: industry-leading 10:1 full load ampere (FLA) range and is repeatable over a -10 to +70 °C temperature range.
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Zero drift PGA based Analog Front End Design for Circuit Breakers (ACB/MCCB-ETU)
This reference design is intended for use in molded case circuit breakers (MCCB) electronic trip units. The programmable gain amplifier based design acts as the current monitoring for over-current earth fault relays. Utilizing a zero drift programmable amplifier: this design provides a ±10 % pick-up (A) accuracy and time delay (s) accuracy of 0 to -20%. Additionally: this solution was designed to handle harsh environment conditions by including features such as ambient insensitivity from -10 to 70 ⁰C and high electromagnetic immunity. Finally the analog front end of this design interfaces seemlessly with the TI MSP430 MCU for quicker evaluation and faster time-to-market.
CSD18537NKCS Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the CSD18537NKCS is -40°C to 150°C.
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To ensure the N-channel MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V and a drain-source voltage (Vds) of at least 1V.
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The recommended gate resistor value for the CSD18537NKCS is between 10Ω and 100Ω, depending on the specific application and switching frequency.
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Yes, the CSD18537NKCS is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
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To protect the CSD18537NKCS from ESD, use proper handling and storage procedures, and consider adding ESD protection devices, such as TVS diodes, in the circuit design.