| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF2907ZS-7PPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | CSD19505KCS vs IRF2907ZS-7PPBF |
Part Details for CSD19505KCS by Texas Instruments
Results Overview of CSD19505KCS by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CSD19505KCS Information
CSD19505KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19505KCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AH3842
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Newark | Mosfet, N Channel, 80V, 150A, To-220-3, |Texas Instruments CSD19505KCS RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 452 |
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$2.2181 / $3.8536 | Buy Now |
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DISTI #
595-CSD19505KCS
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Mouser Electronics | MOSFETs 80V N-CH NexFET Pwr MOSFET RoHS: Compliant | 523 |
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$1.7600 / $4.4900 | Buy Now |
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DISTI #
CSD19505KCS
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TME | Transistor: N-MOSFET, unipolar, 80V, 150A, 300W, TO220-3 Min Qty: 1 | 1092 |
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$1.3800 / $4.0300 | Buy Now |
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DISTI #
CSD19505KCS-U1
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Maritex | MOSFETs, CSD19505KCS, TEXAS INSTRUMENTS, 150 A, 80 V, 20 V Min Qty: 1 Package Multiple: 1 | 1769 |
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$1.4810 / $2.9250 | Buy Now |
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Win Source Electronics | MOSFET N-CH 80V 150A TO220-3 / N-Channel 80 V 150A (Ta) 300W (Tc) Through Hole TO-220-3 | 10000 |
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$1.4188 / $2.1282 | Buy Now |
US Tariff Estimator: CSD19505KCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD19505KCS CAD Models
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CSD19505KCS Part Data Attributes
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CSD19505KCS
Texas Instruments
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Datasheet
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CSD19505KCS
Texas Instruments
Power Field-Effect Transistor, 150A I(D), 80V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-220-3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 510 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 34 Pf | |
| JEDEC-95 Code | TO-220 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD19505KCS
This table gives cross-reference parts and alternative options found for CSD19505KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19505KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Resources and Additional Insights for CSD19505KCS
Reference Designs related to CSD19505KCS
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94.5% Efficiency: 500W industrial AC-DC reference design
This reference design is a compact: high efficiency: 24-V DC: 500-W reference design for industrial AC/DC power supplies. This design consists of a front-end: two-phase interleaved transition mode (TM) power factor correction (PFC) based on the UCC28064A. This minimizes the PFC inductor size and reduces EMI filter requirements. The DC-DC is implemented using the HB-LLC stage implemented using TI's UCC256301 device. For efficiency improvement: synchronous rectification is used at secondary which uses the UCC24612.
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Single-stage AC/DC LCC resonant converter reference design
This reference design provides up to 265-W constant voltage and constant current output from a 120-VAC input with a single-stage LCC resonant converter stage. The BOM-cost of this design is highly optimized with the single-stage structure and use of the driver-integrated LLC resonant controller UCC256403. A primary side regulated flyback with UCC28910 is applied as a bias converter and allows you to turn the main power stage on/off. This design can achieve 88% peak efficiency with more than 200-kHz switching frequency at 120 VAC.
CSD19505KCS Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a low-thermal-resistance path from the device to the heat sink or thermal pad.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
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The maximum allowed current is 5A. However, it's recommended to derate the current based on the ambient temperature and PCB thermal design to ensure reliable operation.
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Use a TVS diode or a zener diode to clamp overvoltage transients. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator or a dedicated overcurrent protection IC.
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Use a TVS diode or a dedicated ESD protection IC, such as the TPD1E05U06, to protect the device from electrostatic discharge events.