| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP028N08N3GXKSA1 | Infineon Technologies AG | $2.7553 | Power Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | CSD19506KCS vs IPP028N08N3GXKSA1 |
| IPP028N08N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | CSD19506KCS vs IPP028N08N3G |
Part Details for CSD19506KCS by Texas Instruments
Results Overview of CSD19506KCS by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CSD19506KCS Information
CSD19506KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19506KCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AH3843
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Newark | Mosfet, N Channel, 80V, 100A, To-220-3, |Texas Instruments CSD19506KCS RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 110 |
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$4.9400 / $7.3100 | Buy Now |
|
DISTI #
296-37169-5-ND
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DigiKey | MOSFET N-CH 80V 100A TO220-3 Min Qty: 1 Container: Tube |
45 Tube |
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$2.4084 / $6.0800 | Buy Now |
|
DISTI #
595-CSD19506KCS
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Mouser Electronics | MOSFETs 80V N-CH Power MOSFE T RoHS: Compliant | 26 |
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$2.3300 / $5.8600 | Buy Now |
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DISTI #
CSD19506KCS
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TME | Transistor: N-MOSFET, unipolar, 80V, 150A, 375W, TO220-3 Min Qty: 1 | 0 |
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$3.8000 / $4.1700 | RFQ |
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Chip Stock | 80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm 3-TO-220 -55 to 175 | 721 |
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RFQ |
US Tariff Estimator: CSD19506KCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD19506KCS CAD Models
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CSD19506KCS Part Data Attributes
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CSD19506KCS
Texas Instruments
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Datasheet
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CSD19506KCS
Texas Instruments
Power Field-Effect Transistor, 273A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SFM | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 832 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 273 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 55 Pf | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for CSD19506KCS
This table gives cross-reference parts and alternative options found for CSD19506KCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19506KCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Resources and Additional Insights for CSD19506KCS
Reference Designs related to CSD19506KCS
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400-W Continuous: Scalable: ±2.5- to ±150-V: Programmable Ultrasound Power Supply Reference Design
The TIDA-01352 enables modular and efficient power scaling capability by providing a solution for digitally programmable power supply for powering ultrasound transmit circuit. The design uses push-pull topology to generate high-voltage (HV) and low- (LV) or MID- voltage power supplies. The HV rails are programmable from ±50V to ±150V: whereas the LV or MID rails are programmable from ±2.5V to ±50V. The power supply is capable of providing a continous power of 100-W on each rail. The programmability is implemented using onboard: 12-bit digital-to-analog converters (DACs). All the power supply rails are capable of being synchronized to a master clock. The design is scalable and modular allowing same supply to be duplicated or removed depending on number of channels and number of levels of pulser. The reference design also consists of other LV power supplies necessary for the pulser operation. This reference design is ideal for the high-voltgae DC-DC boost stage to use in conjuction with the floating (post) regulator design TIDA-01371.
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Low Voltage: 50A Sensorless FOC Reference Design for PM or BLDC Motors
The design is a 30V to 54 V Brushless DC motor (BLDC) or Permanent-magnet Synchronous Motors (PMSM) controller for low voltage: high current: high power ebike: power tool: fan: and pump applications. The design uses the Texas Instruments UCC27211D MOSFET drivers: CSD19506KCS 80V NexFET™ power MOSFETs: TMS320F28027F MCU with InstaSPIN™ technology: TPS54360 buck converter: and LDOs. The design utilizes InstaSPIN-FOC technology to identify and tune PMSM or BLDC motor parameters: as well as control motor speed via an external throttle. Overall: the design focuses on demonstrating highly efficient control of high power: low voltage BLDC or PMSM motors.
CSD19506KCS Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a high-quality decoupling capacitor (e.g., 10uF) close to the device, and ensure the output voltage (VOUT) is within the recommended range (0.8V to 3.3V).
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A 10uF to 22uF X5R or X7R ceramic capacitor is recommended, with a voltage rating of 10V to 25V, depending on the input voltage range.
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Ensure the input voltage (VIN) is applied before the enable signal (EN). The enable signal should be asserted after the input voltage has reached its nominal value.
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A 10uF to 22uF X5R or X7R ceramic capacitor is recommended, with a voltage rating of 2.5V to 6.3V, depending on the output voltage range.