Part Details for CSD19535KCS by Texas Instruments
Results Overview of CSD19535KCS by Texas Instruments
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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CSD19535KCS Information
CSD19535KCS by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD19535KCS | Texas Instruments | 100V, N ch NexFET MOSFET™, single TO-220, 3.6mOhm 3-TO-220 -55 to 175 |
Price & Stock for CSD19535KCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-37288-5-ND
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DigiKey | MOSFET N-CH 100V 150A TO220-3 Min Qty: 1 Container: Tube |
853 Tube |
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$1.9891 / $5.1600 | Buy Now |
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DISTI #
595-CSD19535KCS
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Mouser Electronics | MOSFETs 100V N-CH NexFET Pwr MOSFET RoHS: Compliant | 471 |
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$1.5900 / $4.6900 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 150A I(D), 100V, 0.0044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220 | 1 |
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$4.2000 | Buy Now |
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DISTI #
CSD19535KCS
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TME | Transistor: N-MOSFET, unipolar, 100V, 150A, 300W, TO220-3 Min Qty: 1 | 353 |
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$2.1800 / $4.2100 | Buy Now |
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Chip 1 Exchange | INSTOCK | 700 |
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RFQ | |
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Chip Stock | 100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm 3-TO-220 -55 to 175 | 4270 |
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RFQ | |
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Vyrian | Power Field-Effect Transistor, 150A I(D), 100V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | 8902 |
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RFQ |
US Tariff Estimator: CSD19535KCS by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
CSD19535KCS CAD Models
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CSD19535KCS Part Data Attributes
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CSD19535KCS
Texas Instruments
Buy Now
Datasheet
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CSD19535KCS
Texas Instruments
Power Field-Effect Transistor, 150A I(D), 100V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 451 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 38 Pf | |
| JEDEC-95 Code | TO-220 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
CSD19535KCS Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a high-quality, low-ESR capacitor (e.g., X5R or X7R) for input decoupling. Bias the device with a stable voltage source, and ensure the output voltage is within the recommended range (0.8V to 3.3V).
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A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for input decoupling. The capacitor should be placed as close to the VIN pin as possible.
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Use a shielded inductor, keep the layout compact, and minimize loop areas. Ensure the device is placed away from noise sources and sensitive circuits. Use a common-mode choke or ferrite bead on the input lines to reduce EMI.
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The maximum allowed output current is 3.5A. However, the device can deliver up to 5A peak current for short durations (e.g., during startup or transient events).