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4.5A, 20V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, 1.70 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, WAFER LEVEL-12
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Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 479 |
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CSD75211W1723
Texas Instruments
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CSD75211W1723
Texas Instruments
4.5A, 20V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, 1.70 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, WAFER LEVEL-12
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | 1.70 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, WAFER LEVEL-12 | |
Pin Count | 12 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Texas Instruments | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBGA-B12 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 12 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 4.5 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD75211W1723. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD75211W1723, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
UT3443G-AG6-R | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-6 | Unisonic Technologies Co Ltd | CSD75211W1723 vs UT3443G-AG6-R |
PJS6415AE_S1_00001 | Power Field-Effect Transistor, 4.9A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | PanJit Semiconductor | CSD75211W1723 vs PJS6415AE_S1_00001 |