Datasheets
CY7C1312KV18-250BZI by:

QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

Part Details for CY7C1312KV18-250BZI by Cypress Semiconductor

Overview of CY7C1312KV18-250BZI by Cypress Semiconductor

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Price & Stock for CY7C1312KV18-250BZI

Part # Distributor Description Stock Price Buy
DISTI # 09AK1611
Newark Qdr Sram, 1Mx18, 0.45Ns, Cmos, Pbga165 |Cypress Infineon Technologies CY7C1312KV18-250BZI Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $21.1000
  • 10 $19.7300
  • 25 $19.1500
  • 50 $17.2900
  • 100 $16.2800
  • 250 $14.3200
$14.3200 / $21.1000 Buy Now
DISTI # 2156-CY7C1312KV18-250BZI-ND
DigiKey IC SRAM 18MBIT PARALLEL 165FBGA Min Qty: 11 Container: Bulk MARKETPLACE PRODUCT 15
In Stock
  • 11 $28.6400
$28.6400 Buy Now
Onlinecomponents.com   408 Partner Stock
  • 3 $36.7500
  • 35 $11.8200
  • 150 $11.3600
  • 300 $10.9300
  • 1,000 $10.5000
$10.5000 / $36.7500 Buy Now
Bristol Electronics   50
RFQ
Rochester Electronics CY7C1312KV18 - QDR SRAM, 1MX18, 0.45ns PBGA165 ' RoHS: Not Compliant Status: Active Min Qty: 1 15
  • 1 $28.9200
  • 25 $28.3400
  • 100 $27.1800
  • 500 $26.0300
  • 1,000 $24.5800
$24.5800 / $28.9200 Buy Now
Chip1Cloud 18-Mbit QDR? II SRAM Two-Word Burst Architecture 1660
RFQ
Flip Electronics Stock, ship today 863
  • 1 $19.0300
$19.0300 RFQ

Part Details for CY7C1312KV18-250BZI

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CY7C1312KV18-250BZI Part Data Attributes:

CY7C1312KV18-250BZI Cypress Semiconductor
Buy Now Datasheet
Compare Parts:
CY7C1312KV18-250BZI Cypress Semiconductor QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 18874368 bit
Memory IC Type QDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 1MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.25 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.56 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 13 mm

Alternate Parts for CY7C1312KV18-250BZI

This table gives cross-reference parts and alternative options found for CY7C1312KV18-250BZI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1312KV18-250BZI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1312KV18-250BZXC QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1312KV18-250BZI vs CY7C1312KV18-250BZXC
CY7C1312KV18-250BZXI QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, Infineon Technologies AG CY7C1312KV18-250BZI vs CY7C1312KV18-250BZXI
CY7C1312KV18-250BZC QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, Infineon Technologies AG CY7C1312KV18-250BZI vs CY7C1312KV18-250BZC
CY7C1312KV18-250BZXI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1312KV18-250BZI vs CY7C1312KV18-250BZXI
CY7C1312KV18-250BZCT Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Infineon Technologies AG CY7C1312KV18-250BZI vs CY7C1312KV18-250BZCT
Part Number Description Manufacturer Compare
CY7C1312KV18-250BZC QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, Infineon Technologies AG CY7C1312KV18-250BZI vs CY7C1312KV18-250BZC
CY7C1312KV18-250BZXI QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, Infineon Technologies AG CY7C1312KV18-250BZI vs CY7C1312KV18-250BZXI
CY7C1312KV18-250BZXC QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1312KV18-250BZI vs CY7C1312KV18-250BZXC
CY7C1312KV18-250BZCT Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Infineon Technologies AG CY7C1312KV18-250BZI vs CY7C1312KV18-250BZCT
CY7C1312KV18-250BZXI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1312KV18-250BZI vs CY7C1312KV18-250BZXI

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