Part Details for CY7C1410V18-200BZC by Cypress Semiconductor
Overview of CY7C1410V18-200BZC by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CY7C1410V18-200BZC
CY7C1410V18-200BZC CAD Models
CY7C1410V18-200BZC Part Data Attributes:
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CY7C1410V18-200BZC
Cypress Semiconductor
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Datasheet
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CY7C1410V18-200BZC
Cypress Semiconductor
QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | 15 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e0 | |
Length | 17 mm | |
Memory Density | 33554432 bit | |
Memory IC Type | QDR SRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Voltage-Min | 1.7 V | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | Tin/Lead/Silver (Sn/Pb/Ag) | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 15 mm |
Alternate Parts for CY7C1410V18-200BZC
This table gives cross-reference parts and alternative options found for CY7C1410V18-200BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1410V18-200BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GS8662D19BD-300I | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1410V18-200BZC vs GS8662D19BD-300I |
IS61QDPB24M18A-300M3LI | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | Integrated Silicon Solution Inc | CY7C1410V18-200BZC vs IS61QDPB24M18A-300M3LI |
GS8672D19BE-375T | Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1410V18-200BZC vs GS8672D19BE-375T |
GS8662DT20BGD-500I | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1410V18-200BZC vs GS8662DT20BGD-500I |
GS8662T20BGD-350T | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | CY7C1410V18-200BZC vs GS8662T20BGD-350T |
MT57W4MH9JF-7.5 | DDR SRAM, 4MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Micron Technology Inc | CY7C1410V18-200BZC vs MT57W4MH9JF-7.5 |
CY7C1426V18-250BZC | QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 | Cypress Semiconductor | CY7C1410V18-200BZC vs CY7C1426V18-250BZC |
IS61QDP2B44M18A-333M3I | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | CY7C1410V18-200BZC vs IS61QDP2B44M18A-333M3I |
GS81302D19AGE-400 | DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1410V18-200BZC vs GS81302D19AGE-400 |
UPD44324094F5-E33-EQ2 | DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 | NEC Electronics Group | CY7C1410V18-200BZC vs UPD44324094F5-E33-EQ2 |