Part Details for D2017UKG4 by TT Electronics Resistors
Overview of D2017UKG4 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for D2017UKG4
D2017UKG4 CAD Models
D2017UKG4 Part Data Attributes
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D2017UKG4
TT Electronics Resistors
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Datasheet
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D2017UKG4
TT Electronics Resistors
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, DP, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | ROHS COMPLIANT, CERAMIC, DP, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | S-CDFM-F2 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for D2017UKG4
This table gives cross-reference parts and alternative options found for D2017UKG4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of D2017UKG4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| LF2805A | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | TE Connectivity | D2017UKG4 vs LF2805A |
| PTF040551E | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30265, 2 PIN | Infineon Technologies AG | D2017UKG4 vs PTF040551E |
| PTF080451E | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-2 | Infineon Technologies AG | D2017UKG4 vs PTF080451E |
| LF2805A | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | MACOM | D2017UKG4 vs LF2805A |
| D2017UK | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | D2017UKG4 vs D2017UK |
| PTF040551F | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31265, 2 PIN | Infineon Technologies AG | D2017UKG4 vs PTF040551F |