Part Details for DMP2100UFU-13 by Diodes Incorporated
Overview of DMP2100UFU-13 by Diodes Incorporated
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for DMP2100UFU-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
DMP2100UFU-13DI-ND
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DigiKey | MOSFET 2P-CH 20V 5.7A 6UDFN Min Qty: 10000 Lead time: 12 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1400 / $0.1471 | Buy Now |
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DISTI #
DMP2100UFU-13
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Avnet Americas | Transistor MOSFET Array Dual P-Channel 20V 5.7A 6-Pin UDFN T/R - Tape and Reel (Alt: DMP2100UFU-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.1130 / $0.1335 | Buy Now |
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DISTI #
621-DMP2100UFU-13
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Mouser Electronics | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W RoHS: Compliant | 0 |
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$0.1600 | Order Now |
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DISTI #
DMP2100UFU-13
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Avnet Silica | Transistor MOSFET Array Dual P-Channel 20V 5.7A 6-Pin UDFN T/R (Alt: DMP2100UFU-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for DMP2100UFU-13
DMP2100UFU-13 CAD Models
DMP2100UFU-13 Part Data Attributes
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DMP2100UFU-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMP2100UFU-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 12 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 29 pF | |
| JESD-30 Code | R-PDSO-N6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.9 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |