Part Details for DO224-4M by Msi Electronics Inc
Overview of DO224-4M by Msi Electronics Inc
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for DO224-4M
DO224-4M CAD Models
DO224-4M Part Data Attributes:
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DO224-4M
Msi Electronics Inc
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DO224-4M
Msi Electronics Inc
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MSI ELECTRONICS INC | |
| Package Description | O-LALF-W2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | 3% MATCHED SET OF FOUR DIODES | |
| Breakdown Voltage-Min | 12 V | |
| Case Connection | ISOLATED | |
| Configuration | SEPARATE, 4 ELEMENTS | |
| Diode Capacitance Ratio-Min | 7 | |
| Diode Capacitance-Nom | 10 pF | |
| Diode Element Material | SILICON | |
| Diode Type | VARIABLE CAPACITANCE DIODE | |
| Frequency Band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
| JESD-30 Code | O-LALF-W2 | |
| Number of Elements | 4 | |
| Number of Terminals | 2 | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Not Qualified | |
| Quality Factor-Min | 200 | |
| Reverse Current-Max | 0.01 µA | |
| Reverse Test Voltage | 10 V | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Variable Capacitance Diode Classification | ABRUPT |