Datasheets
DTC114EE-C by: Secos Corporation

Small Signal Bipolar Transistor

Part Details for DTC114EE-C by Secos Corporation

Overview of DTC114EE-C by Secos Corporation

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Part Details for DTC114EE-C

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DTC114EE-C Part Data Attributes:

DTC114EE-C Secos Corporation
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DTC114EE-C Secos Corporation Small Signal Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer SECOS CORP
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

Alternate Parts for DTC114EE-C

This table gives cross-reference parts and alternative options found for DTC114EE-C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTC114EE-C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DTA114EE Small Signal Bipolar Transistor, Tak Cheong Electronics (Holdings) Co Ltd DTC114EE-C vs DTA114EE
DTA114ECA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd DTC114EE-C vs DTA114ECA
DTC114EUA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 Galaxy Microelectronics DTC114EE-C vs DTC114EUA
DTC114ESA-C Small Signal Bipolar Transistor Secos Corporation DTC114EE-C vs DTC114ESA-C
DTC114ECA Small Signal Bipolar Transistor Taiwan Semiconductor DTC114EE-C vs DTC114ECA
ADTA143XUAQ-13 Small Signal Bipolar Transistor, Diodes Incorporated DTC114EE-C vs ADTA143XUAQ-13
DTA123ECAHZGT116 Small Signal Bipolar Transistor, ROHM Semiconductor DTC114EE-C vs DTA123ECAHZGT116
DTC114EUA-C Small Signal Bipolar Transistor Secos Corporation DTC114EE-C vs DTC114EUA-C
DTC114ECA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23 Galaxy Microelectronics DTC114EE-C vs DTC114ECA
ADTA114EUAQ-13 Small Signal Bipolar Transistor, Diodes Incorporated DTC114EE-C vs ADTA114EUAQ-13

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