There are no models available for this part yet.
Overview of EBE11UD8AGSA-6E-E by Elpida Memory Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Consumer Electronics
Computing and Data Storage
CAD Models for EBE11UD8AGSA-6E-E by Elpida Memory Inc
Part Data Attributes for EBE11UD8AGSA-6E-E by Elpida Memory Inc
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|---|---|
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Rohs Code
|
Yes
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|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
ELPIDA MEMORY INC
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Part Package Code
|
SODIMM
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Package Description
|
DIMM, DIMM200,24
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Pin Count
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200
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Reach Compliance Code
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unknown
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ECCN Code
|
EAR99
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HTS Code
|
8542.32.00.36
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Access Mode
|
DUAL BANK PAGE BURST
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Access Time-Max
|
0.45 ns
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Additional Feature
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AUTO/SELF REFRESH
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Clock Frequency-Max (fCLK)
|
333 MHz
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I/O Type
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COMMON
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JESD-30 Code
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R-XZMA-N200
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Memory Density
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8589934592 bit
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Memory IC Type
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DDR DRAM MODULE
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Memory Width
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64
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Number of Functions
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1
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Number of Ports
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1
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Number of Terminals
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200
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Number of Words
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134217728 words
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Number of Words Code
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128000000
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Operating Mode
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SYNCHRONOUS
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Operating Temperature-Max
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85 °C
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Operating Temperature-Min
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|
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Organization
|
128MX64
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Output Characteristics
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3-STATE
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Package Body Material
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UNSPECIFIED
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Package Code
|
DIMM
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Package Equivalence Code
|
DIMM200,24
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Package Shape
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RECTANGULAR
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Package Style
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MICROELECTRONIC ASSEMBLY
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Peak Reflow Temperature (Cel)
|
260
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Qualification Status
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Not Qualified
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Refresh Cycles
|
8192
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Self Refresh
|
YES
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Standby Current-Max
|
0.16 A
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Supply Current-Max
|
3.12 mA
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Supply Voltage-Max (Vsup)
|
1.9 V
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Supply Voltage-Min (Vsup)
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1.7 V
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Supply Voltage-Nom (Vsup)
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1.8 V
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Surface Mount
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NO
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Technology
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CMOS
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Temperature Grade
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OTHER
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Terminal Form
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NO LEAD
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Terminal Pitch
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0.6 mm
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Terminal Position
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ZIG-ZAG
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Alternate Parts for EBE11UD8AGSA-6E-E
This table gives cross-reference parts and alternative options found for EBE11UD8AGSA-6E-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EBE11UD8AGSA-6E-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M470T2863FB3-CE6 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | EBE11UD8AGSA-6E-E vs M470T2863FB3-CE6 |
| M470T2863FB3-CE7 | DDR DRAM Module, 128MX64, 0.4ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | EBE11UD8AGSA-6E-E vs M470T2863FB3-CE7 |
| HYMP512S64BLP8-Y5 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | EBE11UD8AGSA-6E-E vs HYMP512S64BLP8-Y5 |
| NT1GT64U8HA0BN-3C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200 | Nanya Technology Corporation | EBE11UD8AGSA-6E-E vs NT1GT64U8HA0BN-3C |
| HYMP112S64AP6-Y5 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | EBE11UD8AGSA-6E-E vs HYMP112S64AP6-Y5 |
| EBE11UD8AGUA-6E-E | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Elpida Memory Inc | EBE11UD8AGSA-6E-E vs EBE11UD8AGUA-6E-E |
| HYS64T128020EDL-3-C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200 | Qimonda AG | EBE11UD8AGSA-6E-E vs HYS64T128020EDL-3-C |
| M470T2864QZ3-LE6 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200 | Samsung Semiconductor | EBE11UD8AGSA-6E-E vs M470T2864QZ3-LE6 |
| HYS64T128921HDL-3S-B | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SO-DIMM-200 | Qimonda AG | EBE11UD8AGSA-6E-E vs HYS64T128921HDL-3S-B |
| W3HG128M64EEU806D4SG | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | EBE11UD8AGSA-6E-E vs W3HG128M64EEU806D4SG |