Part Details for EBE21RD4ABHA-4C-E by Elpida Memory Inc
Overview of EBE21RD4ABHA-4C-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for EBE21RD4ABHA-4C-E
EBE21RD4ABHA-4C-E CAD Models
EBE21RD4ABHA-4C-E Part Data Attributes
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EBE21RD4ABHA-4C-E
Elpida Memory Inc
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Datasheet
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EBE21RD4ABHA-4C-E
Elpida Memory Inc
DDR DRAM Module, 256MX72, 0.6ns, CMOS, LEAD FREE, DIMM-240
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM240,40 | |
| Pin Count | 240 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N240 | |
| Memory Density | 19327352832 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 72 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 240 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX72 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM240,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.86 A | |
| Supply Current-Max | 7.48 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for EBE21RD4ABHA-4C-E
This table gives cross-reference parts and alternative options found for EBE21RD4ABHA-4C-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EBE21RD4ABHA-4C-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W1D256M72R8A-3.75AE-JA2 | 256MX8 DDR DRAM MODULE, 0.5ns, DMA240, MO-237, DIMM-240 | AMD Xilinx | EBE21RD4ABHA-4C-E vs W1D256M72R8A-3.75AE-JA2 |
| HYS72T256300EP-3S-C | DDR DRAM Module, 256MX72, 0.45ns, CMOS, GREEN, RDIMM-240 | Qimonda AG | EBE21RD4ABHA-4C-E vs HYS72T256300EP-3S-C |
| HYS72T256021HF-3.7-A | DDR DRAM Module, 256MX72, CMOS, GREEN, DIMM-240 | Infineon Technologies AG | EBE21RD4ABHA-4C-E vs HYS72T256021HF-3.7-A |
| MT18HVF25672D-80EXX | DDR DRAM Module, 256MX72, CMOS, LEAD FREE, RDIMM-240 | Micron Technology Inc | EBE21RD4ABHA-4C-E vs MT18HVF25672D-80EXX |
| W3HG256M72AER665AD6MG | DDR DRAM Module, 256MX72, 0.45ns, CMOS, ROHS COMPLIANT, RDIMM-240 | Microsemi Corporation | EBE21RD4ABHA-4C-E vs W3HG256M72AER665AD6MG |
| M378B5773DH0-CF8 | DDR DRAM Module, 256MX64, 20ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | EBE21RD4ABHA-4C-E vs M378B5773DH0-CF8 |
| VR7EU567258FBB | DDR DRAM Module, 256MX72, 0.3ns, CMOS, ROHS COMPLIANT, DIMM-240 | Viking Technology | EBE21RD4ABHA-4C-E vs VR7EU567258FBB |
| HMT125U7AFR8C-H8 | DDR DRAM Module, 256MX72, CMOS, HALOGEN FREE, DIMM-240 | SK Hynix Inc | EBE21RD4ABHA-4C-E vs HMT125U7AFR8C-H8 |
| M395T5663QZ4-CE65 | DDR DRAM Module, 256MX72, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | EBE21RD4ABHA-4C-E vs M395T5663QZ4-CE65 |
| W1D256M72R8A-5AP-FB | 256MX8 DDR DRAM MODULE, 0.5ns, DMA240, MO-237, DIMM-240 | AMD Xilinx | EBE21RD4ABHA-4C-E vs W1D256M72R8A-5AP-FB |