Part Details for FDC6506P by Fairchild Semiconductor Corporation
Overview of FDC6506P by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for FDC6506P
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip 1 Exchange | INSTOCK | 90 |
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RFQ |
Part Details for FDC6506P
FDC6506P CAD Models
FDC6506P Part Data Attributes
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FDC6506P
Fairchild Semiconductor Corporation
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Datasheet
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FDC6506P
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SSOT | |
| Package Description | SUPERSOT-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.96 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDC6506P
This table gives cross-reference parts and alternative options found for FDC6506P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6506P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDC6308PD87Z | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6506P vs FDC6308PD87Z |
| FDC6312P | 2300mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | FDC6506P vs FDC6312P |
| ZXM62P03E6TC | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | Zetex / Diodes Inc | FDC6506P vs ZXM62P03E6TC |
| FDC6306PD84Z | Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6506P vs FDC6306PD84Z |
| ZXM62P03E6TC | Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | Diodes Incorporated | FDC6506P vs ZXM62P03E6TC |
| FDC6306PD87Z | Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6506P vs FDC6306PD87Z |
| FDC6506P | 1800mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | FDC6506P vs FDC6506P |
| FDC6306PS62Z | Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6506P vs FDC6306PS62Z |
| FDC6318P | Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ, 3000-REEL | onsemi | FDC6506P vs FDC6318P |
| ZXM62P03E6TA | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | Diodes Incorporated | FDC6506P vs ZXM62P03E6TA |