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Dual N-Channel Power Trench® MOSFET 25V, 7.0A, 23mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T9955
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Newark | Dual Pt6 N 25/20V Fets M/Reel |Onsemi FDMB3900AN RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
FDMB3900AN
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 7A 8-Pin MicroFET T/R - Tape and Reel (Alt: FDMB3900AN) RoHS: Compliant Min Qty: 995 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 1197738 Partner Stock |
|
$0.3119 / $0.3722 | Buy Now |
DISTI #
FDMB3900AN
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 7A 8-Pin MicroFET T/R - Tape and Reel (Alt: FDMB3900AN) RoHS: Compliant Min Qty: 2942 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 3407 Partner Stock |
|
$0.2108 / $0.2516 | Buy Now |
DISTI #
FDMB3900AN
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TME | Transistor: N-MOSFET x2, unipolar, 25V, 7A, Idm: 28A, 1.6W, MicroFET Min Qty: 1 | 0 |
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$0.4350 / $0.8150 | RFQ |
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Flip Electronics | Stock, ship today | 3407 |
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RFQ | |
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LCSC | 25V 7A 800mW 23m7A10V 3V250uA MicroFET-8(3x1.9) MOSFETs ROHS | 331 |
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$0.3236 / $0.4633 | Buy Now |
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Win Source Electronics | MOSFET 2N-CH 25V 7A 8-MLP / nullDual N-Channel Power Trench® MOSFETTM 25 V, 7.0 A, 23 mΩ | 145500 |
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$0.7920 / $1.1870 | Buy Now |
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FDMB3900AN
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMB3900AN
onsemi
Dual N-Channel Power Trench® MOSFET 25V, 7.0A, 23mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | 3 X 1.90 MM, ROHS COMPLIANT, MICROFET-6 | |
Manufacturer Package Code | 511CW | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 215 pF | |
JESD-30 Code | R-PDSO-N6 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |