Part Details for FDMS86310 by onsemi
Results Overview of FDMS86310 by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDMS86310 Information
FDMS86310 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMS86310
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
95T0003
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Newark | Mosfet, N-Ch, 80V, 50A, Pqfn, |Onsemi FDMS86310 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 0 |
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$1.0500 / $1.0900 | Buy Now |
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DISTI #
FDMS86310DKR-ND
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DigiKey | MOSFET N-CH 80V 17A/50A 8PQFN Min Qty: 1 Container: Digi-Reel |
6878 Digi-Reel® |
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$1.3670 / $3.6900 | Buy Now |
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DISTI #
FDMS86310CT-ND
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DigiKey | MOSFET N-CH 80V 17A/50A 8PQFN Min Qty: 1 Container: Cut Tape |
6878 Cut Tape |
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$1.3670 / $3.6900 | Buy Now |
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DISTI #
FDMS86310TR-ND
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DigiKey | MOSFET N-CH 80V 17A/50A 8PQFN Min Qty: 3000 Container: Tape & Reel |
6878 Tape & Reel |
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$1.1091 | Buy Now |
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DISTI #
512-FDMS86310
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Mouser Electronics | MOSFETs 80V N-Channel PowerTrench MOSFET RoHS: Compliant | 6174 |
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$1.2800 / $3.6900 | Buy Now |
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DISTI #
89518205
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Verical | Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R RoHS: Exempt Min Qty: 210 Package Multiple: 1 Date Code: 2401 | Americas - 63000 |
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$1.1083 / $1.7875 | Buy Now |
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DISTI #
92606595
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Verical | Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R RoHS: Exempt Min Qty: 210 Package Multiple: 1 Date Code: 1901 | Americas - 2160 |
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$1.1083 / $1.7875 | Buy Now |
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DISTI #
92606571
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Verical | Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R RoHS: Exempt Min Qty: 210 Package Multiple: 1 Date Code: 2101 | Americas - 835 |
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$1.1083 / $1.7875 | Buy Now |
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Future Electronics | Single N-Channel 80 V 7.2 mOhm 78 nC 96 W PowerTrench SMT Mosfet - POWER 56-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 52 Weeks Container: Reel | 0Reel |
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$2.9600 | Buy Now |
|
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Onlinecomponents.com | N-Channel PowerTrench® MOSFET 80V, 50A, 4.8mΩ COO: South Korea | 0 |
|
$1.1000 / $3.0100 | Buy Now |
FDMS86310 Part Data Attributes
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FDMS86310
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86310
onsemi
Power Field-Effect Transistor, 50A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MO-240AA
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | PQFN-8 | |
| Package Description | Qfn-8 | |
| Manufacturer Package Code | 483AE | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Avalanche Energy Rating (Eas) | 183 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | Trench Mosfet | |
| Feedback Cap-Max (Crss) | 45 Pf | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 74 Ns | |
| Turn-on Time-Max (ton) | 82 Ns |
FDMS86310 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the FDMS86310 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To minimize EMI, keep the layout as compact as possible, use a solid ground plane, and keep the high-frequency traces away from the low-frequency traces. Also, use shielding and filtering if necessary.
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The recommended PCB material for the FDMS86310 is FR4 or equivalent, with a thickness of 1.6 mm or 0.062 inches.
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The FDMS86310 has a thermal pad that must be connected to a heat sink or a thermal relief pattern on the PCB. Ensure good thermal conductivity and avoid thermal bottlenecks.
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The recommended input capacitance for the FDMS86310 is 10 nF to 100 nF, depending on the application and noise requirements.