Transistors
FDS6612AL86Z
Fairchild Semiconductor Corporation
Description: Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Overview of FDS6612AL86Z by Fairchild Semiconductor Corporation

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Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

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Part Data Attributes for FDS6612AL86Z by Fairchild Semiconductor Corporation

FDS6612AL86Z
Fairchild Semiconductor Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
8.4 A
Drain-source On Resistance-Max
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDS6612AL86Z
    Fairchild Semiconductor Corporation
    Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
    VS

Alternate Parts for FDS6612AL86Z

This table gives cross-reference parts and alternative options found for FDS6612AL86Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6612AL86Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDS6612A Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs FDS6612A
FDS6612A 8400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDS6612AL86Z vs FDS6612A
FDS6612A Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 8.4A, 22mΩ, 2500-REEL onsemi FDS6612AL86Z vs FDS6612A
FDS6612AD84Z Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs FDS6612AD84Z
FDS6612A_NL Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs FDS6612A_NL
Part Number Description Manufacturer Compare
SI9410DY Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs SI9410DY
SI6434DQ Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix FDS6612AL86Z vs SI6434DQ
FDS6614AL86Z Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs FDS6614AL86Z
FDS9412L86Z Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs FDS9412L86Z
PHN103T TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General Purpose Small Signal NXP Semiconductors FDS6612AL86Z vs PHN103T
NDH8436X 5800mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 Texas Instruments FDS6612AL86Z vs NDH8436X
934056038118 TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Small Signal NXP Semiconductors FDS6612AL86Z vs 934056038118
BSO220N03MSG Small Signal Field-Effect Transistor, 6.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8 Infineon Technologies AG FDS6612AL86Z vs BSO220N03MSG
SI4412DYL99Z Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6612AL86Z vs SI4412DYL99Z
SI9410BDY-T1-E3 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies FDS6612AL86Z vs SI9410BDY-T1-E3

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