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Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67P3489
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Newark | N Channel Mosfet, 30V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:5.5A, Continuous Drain Current Id P Channel:5.5A Rohs Compliant: Yes |Onsemi FDS6930B RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4828 |
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$0.2460 | Buy Now |
DISTI #
31Y1403
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Newark | Dual Mosfet, Dual N Channel, 5.5 A, 30 V, 0.031 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDS6930B RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2980 | Buy Now |
DISTI #
86K1390
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Newark | N Channel Mosfet, 30V, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:5.5A, Continuous Drain Current Id P Channel:5.5A Rohs Compliant: Yes |Onsemi FDS6930B RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1900 / $0.2530 | Buy Now |
DISTI #
FDS6930BCT-ND
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DigiKey | MOSFET 2N-CH 30V 5.5A 8SOIC Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4475 In Stock |
|
$0.1839 / $0.9500 | Buy Now |
DISTI #
FDS6930B
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6930B) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 450 Partner Stock |
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RFQ | |
DISTI #
512-FDS6930B
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Mouser Electronics | MOSFETs SO8 DUAL NCH LOGIC level POWER TRENCH RoHS: Compliant | 25243 |
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$0.2110 / $0.5400 | Buy Now |
DISTI #
77271065
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Verical | Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 33 Package Multiple: 1 Date Code: 2403 | Americas - 2475 |
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$0.1815 / $0.3788 | Buy Now |
DISTI #
FDS6930B
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TME | Transistor: N-MOSFET x2, unipolar, 20V, 5.5A, 2W, SO8 Min Qty: 3 | 2379 |
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$0.3350 / $0.5020 | Buy Now |
DISTI #
FDS6930B
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
DISTI #
SMC-FDS6930B
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 2392 |
|
RFQ |
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FDS6930B
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6930B
onsemi
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDS6930B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6930B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI3433CDV-T1-E3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | FDS6930B vs SI3433CDV-T1-E3 |
FDC637BNZ | N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ, 3000-REEL | onsemi | FDS6930B vs FDC637BNZ |
NTUD3169CZT5G | Complementary Small Signal MOSFET 20V, SOT-963 1x1, 0.35P, 8000-REEL | onsemi | FDS6930B vs NTUD3169CZT5G |
FDC634P | P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ, 3000-REEL | onsemi | FDS6930B vs FDC634P |
NTGS3130NT1G | Single N-Channel Power MOSFET 20V, 5.6A, 24mΩ, TSOP-6, 3000-REEL | onsemi | FDS6930B vs NTGS3130NT1G |
SI6926ADQ-T1-GE3 | Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8 | Vishay Intertechnologies | FDS6930B vs SI6926ADQ-T1-GE3 |
SI1967DH-T1-GE3 | Small Signal Field-Effect Transistor, 1A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | Vishay Intertechnologies | FDS6930B vs SI1967DH-T1-GE3 |
SI3433CDV-T1-GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | FDS6930B vs SI3433CDV-T1-GE3 |