Part Details for FH2114 by MACOM
Overview of FH2114 by MACOM
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Part Details for FH2114
FH2114 CAD Models
FH2114 Part Data Attributes:
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FH2114
MACOM
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Datasheet
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FH2114
MACOM
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
| Package Description | FLANGE MOUNT, R-XDFM-F6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 16 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | R-XDFM-F6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 159 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |