Parametric results for: FH2114 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

2 hits Apply

Drain Current-Max (ID) (1)

16 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

25 pF 1

2 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 2

2 hits Apply

R-XDFM-F6 2

2 hits Apply

Manufacturer (2)

MACOM 1 TE Connectivity 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

6 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

159 W 1

2 hits Apply

159 W 1

2 hits Apply

Power Gain-Min (Gp) (1)

13.0 dB 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply