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| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| FUJITSU Semiconductor Limited | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | $56.6990 / $73.1600 |
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| SUMITOMO ELECTRIC Industries Ltd | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET |
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| FUJITSU Limited | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET |
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| SUMITOMO ELECTRIC Device Innovations Inc | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET |
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