FLM7785-4F
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

Overview of FLM7785-4F by SUMITOMO ELECTRIC Industries Ltd

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Where used in Applications: Industrial Automation Healthcare Renewable Energy Robotics and Drones

CAD Models for FLM7785-4F by SUMITOMO ELECTRIC Industries Ltd
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Part Data Attributes for FLM7785-4F by SUMITOMO ELECTRIC Industries Ltd

FLM7785-4F
SUMITOMO ELECTRIC Industries Ltd
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description
HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Pin Count
2
Manufacturer Package Code
CASE IB
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
15 V
Drain Current-Max (ID)
1.3 A
FET Technology
JUNCTION
Highest Frequency Band
C BAND
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
DEPLETION MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
Want to compare parts?
  1. FLM7785-4F
    SUMITOMO ELECTRIC Industries Ltd
    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
    VS

Alternate Parts for FLM7785-4F

This table gives cross-reference parts and alternative options found for FLM7785-4F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM7785-4F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FLM7785-4F RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM7785-4F vs FLM7785-4F
FLM7785-4F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Limited FLM7785-4F vs FLM7785-4F
Part Number Description Manufacturer Compare
FLM7785-8F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM7785-4F vs FLM7785-8F
FLM7785-4F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Limited FLM7785-4F vs FLM7785-4F
FLM7785-4C X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM7785-4F vs FLM7785-4C
FLM7785-18DA X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM7785-4F vs FLM7785-18DA
FLM7785-8C RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Limited FLM7785-4F vs FLM7785-8C
FLM7785-6F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM7785-4F vs FLM7785-6F
FLM7785-6F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Limited FLM7785-4F vs FLM7785-6F
FLM7785-12DA RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Limited FLM7785-4F vs FLM7785-12DA
FLM7785-4D X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM7785-4F vs FLM7785-4D
FLM7785-6F RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM7785-4F vs FLM7785-6F

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