Part Details for FMV10N60E by Fuji Electric Co Ltd
Overview of FMV10N60E by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FMV10N60E
FMV10N60E CAD Models
FMV10N60E Part Data Attributes
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FMV10N60E
Fuji Electric Co Ltd
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Datasheet
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FMV10N60E
Fuji Electric Co Ltd
Power Field-Effect Transistor, 10A I(D), 600V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(SLS), 3 PIN
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Avalanche Energy Rating (Eas) | 416 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.79 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FMV10N60E
This table gives cross-reference parts and alternative options found for FMV10N60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMV10N60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 10N60G-TF1-T | Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | FMV10N60E vs 10N60G-TF1-T |
| STH10NK60ZFI | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT218, 3 PIN | STMicroelectronics | FMV10N60E vs STH10NK60ZFI |
| STF12NK65Z | Power MOSFETs, N-channel 650 V, 0.57 Ohm, 10 A, TO-220FP | STMicroelectronics | FMV10N60E vs STF12NK65Z |
| 10N60G-TF3-T | Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | FMV10N60E vs 10N60G-TF3-T |
| TK10A60E | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | FMV10N60E vs TK10A60E |
| TK11A65D | TRANSISTOR 11 A, 650 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | FMV10N60E vs TK11A65D |
| 10N60L-TF3-T | Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | FMV10N60E vs 10N60L-TF3-T |
| AP3989I | TRANSISTOR 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | FMV10N60E vs AP3989I |
| STH10NC60FI | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | FMV10N60E vs STH10NC60FI |