Datasheets
GBU801HD2G by: Taiwan Semiconductor

Bridge Rectifier Diode,

Part Details for GBU801HD2G by Taiwan Semiconductor

Overview of GBU801HD2G by Taiwan Semiconductor

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Price & Stock for GBU801HD2G

Part # Distributor Description Stock Price Buy
DISTI # GBU801HD2G-ND
DigiKey BRIDGE RECT 1PHASE 50V 8A GBU Lead time: 10 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # GBU801HD2G
Avnet Americas Diode Rectifier Standard Bridge Single 50V 8A 4-Pin Case GBU Tube - Rail/Tube (Alt: GBU801HD2G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
RFQ

Part Details for GBU801HD2G

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GBU801HD2G Part Data Attributes

GBU801HD2G Taiwan Semiconductor
Buy Now Datasheet
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GBU801HD2G Taiwan Semiconductor Bridge Rectifier Diode,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Min 50 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 200 A
Number of Elements 4
Number of Phases 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50 V
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10

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