There are no models available for this part yet.
Overview of GS8672D18BGE-300T by GSI Technology
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SA1330(0)-T1B-A | Renesas Electronics Corporation | Small Signal Bipolar Transistors | |
| 2SA1330(0)-T1B-AT | Renesas Electronics Corporation | Small Signal Bipolar Transistors | |
| 2SB1300-T-AZ | Renesas Electronics Corporation | Bipolar Power Transistors |
CAD Models for GS8672D18BGE-300T by GSI Technology
Part Data Attributes for GS8672D18BGE-300T by GSI Technology
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
GSI TECHNOLOGY
|
|
Part Package Code
|
BGA
|
|
Package Description
|
LBGA, BGA165,11X15,40
|
|
Pin Count
|
165
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
3A991.B.2.A
|
|
HTS Code
|
8542.32.00.41
|
|
Access Time-Max
|
0.45 ns
|
|
Additional Feature
|
PIPELINE ARCHITECTURE
|
|
Clock Frequency-Max (fCLK)
|
300 MHz
|
|
I/O Type
|
SEPARATE
|
|
JESD-30 Code
|
R-PBGA-B165
|
|
Length
|
17 mm
|
|
Memory Density
|
75497472 bit
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|
Memory IC Type
|
STANDARD SRAM
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|
Memory Width
|
18
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|
Number of Functions
|
1
|
|
Number of Terminals
|
165
|
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Number of Words
|
4194304 words
|
|
Number of Words Code
|
4000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
4MX18
|
|
Output Characteristics
|
3-STATE
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|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
LBGA
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|
Package Equivalence Code
|
BGA165,11X15,40
|
|
Package Shape
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RECTANGULAR
|
|
Package Style
|
GRID ARRAY, LOW PROFILE
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|
Parallel/Serial
|
PARALLEL
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Qualification Status
|
Not Qualified
|
|
Seated Height-Max
|
1.5 mm
|
|
Standby Voltage-Min
|
1.7 V
|
|
Supply Current-Max
|
1.1 mA
|
|
Supply Voltage-Max (Vsup)
|
1.9 V
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|
Supply Voltage-Min (Vsup)
|
1.7 V
|
|
Supply Voltage-Nom (Vsup)
|
1.8 V
|
|
Surface Mount
|
YES
|
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Technology
|
CMOS
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Temperature Grade
|
COMMERCIAL
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|
Terminal Form
|
BALL
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Terminal Pitch
|
1 mm
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Terminal Position
|
BOTTOM
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
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Width
|
15 mm
|
Alternate Parts for GS8672D18BGE-300T
This table gives cross-reference parts and alternative options found for GS8672D18BGE-300T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8672D18BGE-300T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS61QDB44M18A-300B3 | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 | Integrated Silicon Solution Inc | GS8672D18BGE-300T vs IS61QDB44M18A-300B3 |
| CY7C1513KV18-300BZXC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8672D18BGE-300T vs CY7C1513KV18-300BZXC |
| GS8662D18GE-300T | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | GS8672D18BGE-300T vs GS8662D18GE-300T |
| IS61QDB44M18A-300M3L | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | Integrated Silicon Solution Inc | GS8672D18BGE-300T vs IS61QDB44M18A-300M3L |
| CY7C1513JV18-300BZC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8672D18BGE-300T vs CY7C1513JV18-300BZC |
| GS8662D18BD-300T | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8672D18BGE-300T vs GS8662D18BD-300T |
| IS61QDB44M18-300M3 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LFBGA-165 | Integrated Silicon Solution Inc | GS8672D18BGE-300T vs IS61QDB44M18-300M3 |
| CY7C1513KV18-300BZC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8672D18BGE-300T vs CY7C1513KV18-300BZC |
| GS8662D18E-300T | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8672D18BGE-300T vs GS8662D18E-300T |
| CY7C1513AV18-300BZXC | QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8672D18BGE-300T vs CY7C1513AV18-300BZXC |