Part Details for H5DU5162ETR-E3I by SK Hynix Inc
Overview of H5DU5162ETR-E3I by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
Part Details for H5DU5162ETR-E3I
H5DU5162ETR-E3I CAD Models
H5DU5162ETR-E3I Part Data Attributes:
|
|
H5DU5162ETR-E3I
SK Hynix Inc
Buy Now
Datasheet
|
Compare Parts:
H5DU5162ETR-E3I
SK Hynix Inc
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VBGA, TSSOP66,.46 | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e6 | |
| Length | 12 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VBGA | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.26 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8 mm |
Alternate Parts for H5DU5162ETR-E3I
This table gives cross-reference parts and alternative options found for H5DU5162ETR-E3I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5DU5162ETR-E3I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| H5DU5162ETR-E3J | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | H5DU5162ETR-E3I vs H5DU5162ETR-E3J |
| MT46V32M16P-5BIT | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16P-5BIT |
| MT46V32M16P-5BLIT | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16P-5BLIT |
| MT46V32M16P-5BIT:C | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16P-5BIT:C |
| MT46V32M16TG-5BLIT:C | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16TG-5BLIT:C |
| MT46V32M16P-5BLIT:C | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16P-5BLIT:C |
| MT46V32M16TG-5BIT:C | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16TG-5BIT:C |
| MT46V32M16TG-5BLIT | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16TG-5BLIT |
| MT46V32M16TG-5BIT | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | H5DU5162ETR-E3I vs MT46V32M16TG-5BIT |