Part Details for H5MS5122DFR-J3M by SK Hynix Inc
Overview of H5MS5122DFR-J3M by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for H5MS5122DFR-J3M
H5MS5122DFR-J3M CAD Models
H5MS5122DFR-J3M Part Data Attributes
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H5MS5122DFR-J3M
SK Hynix Inc
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Datasheet
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H5MS5122DFR-J3M
SK Hynix Inc
DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -30 °C | |
| Organization | 16MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.0003 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8 mm |
Alternate Parts for H5MS5122DFR-J3M
This table gives cross-reference parts and alternative options found for H5MS5122DFR-J3M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5MS5122DFR-J3M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48H16M32LFB5-6L:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LFB5-6L:C |
| MT48H16M32LGB5-6:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LGB5-6:C |
| MT48H16M32LGB5-6LIT:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LGB5-6LIT:C |
| MT48H16M32LFB5-6LAIT:C | Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LFB5-6LAIT:C |
| MT48H16M32LFB5-6LIT:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LFB5-6LIT:C |
| EDD51323DBH-5BLS-F | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, HALOGEN FREE AND ROHS COMPLIANT, FBGA-90 | Elpida Memory Inc | H5MS5122DFR-J3M vs EDD51323DBH-5BLS-F |
| W949D2CBJX6G | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 | Winbond Electronics Corp | H5MS5122DFR-J3M vs W949D2CBJX6G |
| EDD51321DBH-5BTS-F | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 | Elpida Memory Inc | H5MS5122DFR-J3M vs EDD51321DBH-5BTS-F |
| MT48H16M32LGB5-6IT:C | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LGB5-6IT:C |
| MT48H16M32LGB5-6LAIT:C | Synchronous DRAM, 16MX32, 5ns, CMOS, PBGA90, VFBGA-90 | Micron Technology Inc | H5MS5122DFR-J3M vs MT48H16M32LGB5-6LAIT:C |