Part Details for H5PS2562GFR-C4J by SK Hynix Inc
Overview of H5PS2562GFR-C4J by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for H5PS2562GFR-C4J
H5PS2562GFR-C4J CAD Models
H5PS2562GFR-C4J Part Data Attributes
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H5PS2562GFR-C4J
SK Hynix Inc
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Datasheet
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H5PS2562GFR-C4J
SK Hynix Inc
DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 267 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| JESD-609 Code | e1 | |
| Length | 12.5 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 7.5 mm |
Alternate Parts for H5PS2562GFR-C4J
This table gives cross-reference parts and alternative options found for H5PS2562GFR-C4J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5PS2562GFR-C4J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H16M16BG-5EAT:B | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | H5PS2562GFR-C4J vs MT47H16M16BG-5EAT:B |
| K4N56163QF-GC370 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | H5PS2562GFR-C4J vs K4N56163QF-GC370 |
| EDE2516AASE-4A-E | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | Elpida Memory Inc | H5PS2562GFR-C4J vs EDE2516AASE-4A-E |
| K4N56163QF-ZC330 | DDR DRAM, 16MX16, 0.47ns, CMOS, PBGA84, LEAD FREE, FBGA-84 | Samsung Semiconductor | H5PS2562GFR-C4J vs K4N56163QF-ZC330 |
| MT47H16M16BG-37EL:B | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | H5PS2562GFR-C4J vs MT47H16M16BG-37EL:B |
| HY5PS561621LF-E4 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, FBGA-84 | SK Hynix Inc | H5PS2562GFR-C4J vs HY5PS561621LF-E4 |
| HYB18TC256160BF-5 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | H5PS2562GFR-C4J vs HYB18TC256160BF-5 |
| K4N56163QF-GC33 | DDR DRAM, 16MX16, 0.47ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | H5PS2562GFR-C4J vs K4N56163QF-GC33 |
| HYB18TC256160BF-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | H5PS2562GFR-C4J vs HYB18TC256160BF-3.7 |
| K4N56163QF-GC200 | DDR DRAM, 16MX16, 0.3ns, CMOS, PBGA84, FBGA-84 | Samsung Semiconductor | H5PS2562GFR-C4J vs K4N56163QF-GC200 |