Part Details for H5TQ1G83BFR-G7I by SK Hynix Inc
Overview of H5TQ1G83BFR-G7I by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for H5TQ1G83BFR-G7I
H5TQ1G83BFR-G7I CAD Models
H5TQ1G83BFR-G7I Part Data Attributes
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H5TQ1G83BFR-G7I
SK Hynix Inc
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H5TQ1G83BFR-G7I
SK Hynix Inc
DDR DRAM, 128MX18, 0.3ns, CMOS, PBGA78, HALOGEN FREE & ROHS COMPLIANT, FPBGA-78
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA78,9X13,32 | |
| Pin Count | 78 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.3 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 533 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B78 | |
| JESD-609 Code | e1 | |
| Length | 11 mm | |
| Memory Density | 2415919104 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 18 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 128MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.16 mA | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 7.5 mm |
Alternate Parts for H5TQ1G83BFR-G7I
This table gives cross-reference parts and alternative options found for H5TQ1G83BFR-G7I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5TQ1G83BFR-G7I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT41J256M8DA-15E:H | DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ1G83BFR-G7I vs MT41J256M8DA-15E:H |
| MT41J256M8DA-107AIT:M | DDR DRAM, 256MX8, CMOS, PBGA78, FBGA-78 | Micron Technology Inc | H5TQ1G83BFR-G7I vs MT41J256M8DA-107AIT:M |
| NT5CB128M8CN-DG | DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, 0.80 MM PITCH, ROHS COMPLIANT, BGA-78 | Nanya Technology Corporation | H5TQ1G83BFR-G7I vs NT5CB128M8CN-DG |
| MT41J128M8JP-25:F | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ1G83BFR-G7I vs MT41J128M8JP-25:F |
| H5TC1G83BFR-H9A | DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, BGA-78 | SK Hynix Inc | H5TQ1G83BFR-G7I vs H5TC1G83BFR-H9A |
| MT41J128M8JP-187:F | DDR DRAM, 128MX8, 0.15ns, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ1G83BFR-G7I vs MT41J128M8JP-187:F |
| MT41J256M8DA-125:H | DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ1G83BFR-G7I vs MT41J256M8DA-125:H |
| H5TQ2G83BMR-H9C | DDR DRAM, 256MX8, CMOS, PBGA78, FBGA-78 | SK Hynix Inc | H5TQ1G83BFR-G7I vs H5TQ2G83BMR-H9C |
| EDJ1108BFSE-AE-F | DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Elpida Memory Inc | H5TQ1G83BFR-G7I vs EDJ1108BFSE-AE-F |
| EDJ1108BFBG-AE-F | DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Elpida Memory Inc | H5TQ1G83BFR-G7I vs EDJ1108BFBG-AE-F |