Part Details for HGT1S12N60A4DS by Intersil Corporation
Overview of HGT1S12N60A4DS by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGT1S12N60A4DS
HGT1S12N60A4DS CAD Models
HGT1S12N60A4DS Part Data Attributes
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HGT1S12N60A4DS
Intersil Corporation
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Datasheet
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HGT1S12N60A4DS
Intersil Corporation
54A, 600V, N-CHANNEL IGBT, TO-263AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 54 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 18 ns | |
Gate-Emitter Thr Voltage-Max | 5.6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 8 ns | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 180 ns | |
Turn-on Time-Nom (ton) | 33 ns |
Alternate Parts for HGT1S12N60A4DS
This table gives cross-reference parts and alternative options found for HGT1S12N60A4DS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60A4DS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S12N60A4DS9A | 54A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S12N60A4DS vs HGT1S12N60A4DS9A |
HGT1S12N60A4DS9A | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Fairchild Semiconductor Corporation | HGT1S12N60A4DS vs HGT1S12N60A4DS9A |
HGT1S12N60A4DS | 600V, SMPS IGBT, 2LD,TO263, SURFACE MOUNT, 800/RAIL | Fairchild Semiconductor Corporation | HGT1S12N60A4DS vs HGT1S12N60A4DS |