Part Details for HM5264165FTT-B60 by Elpida Memory Inc
Overview of HM5264165FTT-B60 by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Part Details for HM5264165FTT-B60
HM5264165FTT-B60 CAD Models
HM5264165FTT-B60 Part Data Attributes
|
|
HM5264165FTT-B60
Elpida Memory Inc
Buy Now
Datasheet
|
Compare Parts:
HM5264165FTT-B60
Elpida Memory Inc
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HM5264165FTT-B60
This table gives cross-reference parts and alternative options found for HM5264165FTT-B60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HM5264165FTT-B60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48LC4M16A2P-8ELIT | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | HM5264165FTT-B60 vs MT48LC4M16A2P-8ELIT |
| K4S641632D-TC1H | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HM5264165FTT-B60 vs K4S641632D-TC1H |
| K4S641632C-TL1L0 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HM5264165FTT-B60 vs K4S641632C-TL1L0 |
| MB81F641642C-103FN | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | HM5264165FTT-B60 vs MB81F641642C-103FN |
| UPD4564163G5-A80-9JF | Synchronous DRAM, 4MX16, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HM5264165FTT-B60 vs UPD4564163G5-A80-9JF |
| K4S641632D-TC800 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HM5264165FTT-B60 vs K4S641632D-TC800 |
| K4S641632D-TL1L | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HM5264165FTT-B60 vs K4S641632D-TL1L |
| KM416S4030BT-F8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HM5264165FTT-B60 vs KM416S4030BT-F8 |
| KM416S4030CT-G8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HM5264165FTT-B60 vs KM416S4030CT-G8 |
| MT48LC4M16A2TG-8EITTR | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | HM5264165FTT-B60 vs MT48LC4M16A2TG-8EITTR |