HUF75309D3S
Description: 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Overview of HUF75309D3S by Intersil Corporation

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Part Data Attributes for HUF75309D3S by Intersil Corporation

HUF75309D3S
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
19 A
Drain-source On Resistance-Max
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
45 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. HUF75309D3S
    Intersil Corporation
    19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
    VS

Alternate Parts for HUF75309D3S

This table gives cross-reference parts and alternative options found for HUF75309D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HUF75309D3S Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75309D3S vs HUF75309D3S
HUF75309D3ST_NL 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75309D3S vs HUF75309D3ST_NL
HUF75309D3ST_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75309D3S vs HUF75309D3ST_NL
HUF75309D3ST Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75309D3S vs HUF75309D3ST
HUF75309D3S Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75309D3S vs HUF75309D3S
Part Number Description Manufacturer Compare
HUF75329D3S 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3S vs HUF75329D3S
HUFA75321D3ST Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation HUF75309D3S vs HUFA75321D3ST
HUFA75309P3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC HUF75309D3S vs HUFA75309P3
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier HUF75309D3S vs IRFZ24N
FDB045AN08A0 Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HUF75309D3S vs FDB045AN08A0
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75309D3S vs HUFA76409D3S
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier HUF75309D3S vs IRFR1205PBF
HUFA76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75309D3S vs HUFA76419D3S
934056258127 TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors HUF75309D3S vs 934056258127
HUF75329D3ST 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3S vs HUF75329D3ST

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