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Transistors Power Field-Effect Transistors HUF75309P3

HUF75309P3
Description: 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Overview of HUF75309P3 by Rochester Electronics LLC

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Part Data Attributes for HUF75309P3 by Rochester Electronics LLC
Parametric Data

HUF75309P3
Rochester Electronics LLC
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
19 A
Drain-source On Resistance-Max
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
NOT APPLICABLE
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity/Channel Type
N-CHANNEL
Qualification Status
COMMERCIAL
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. HUF75309P3
    Rochester Electronics LLC
    19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    VS

Alternate Parts for HUF75309P3

This table gives cross-reference parts and alternative options found for HUF75309P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation HUF75309P3 vs RFP25N06
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products HUF75309P3 vs IRFZ30
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens HUF75309P3 vs BUZ10
BUZ11A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG HUF75309P3 vs BUZ11A
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HUF75309P3 vs IRFZ30
IRFZ30 30A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC HUF75309P3 vs IRFZ30
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation HUF75309P3 vs HUF75309P3_NL
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics HUF75309P3 vs BUZ11A
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation HUF75309P3 vs HUF75309P3
BUZ11A Power Field-Effect Transistor, 30A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors HUF75309P3 vs BUZ11A
Part Number Description Manufacturer Compare
HUF75329D3S 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309P3 vs HUF75329D3S
HUFA75321D3ST Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation HUF75309P3 vs HUFA75321D3ST
HUFA75309P3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC HUF75309P3 vs HUFA75309P3
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier HUF75309P3 vs IRFZ24N
FDB045AN08A0 Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HUF75309P3 vs FDB045AN08A0
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75309P3 vs HUFA76409D3S
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier HUF75309P3 vs IRFR1205PBF
HUFA76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75309P3 vs HUFA76419D3S
934056258127 TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors HUF75309P3 vs 934056258127
HUF75329D3ST 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309P3 vs HUF75329D3ST

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