Datasheets
HY57V283220LT-PI by: SK Hynix Inc

Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Part Details for HY57V283220LT-PI by SK Hynix Inc

Overview of HY57V283220LT-PI by SK Hynix Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for HY57V283220LT-PI

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HY57V283220LT-PI Part Data Attributes

HY57V283220LT-PI SK Hynix Inc
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HY57V283220LT-PI SK Hynix Inc Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSOP2, TSSOP86,.46,20
Pin Count 86
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e6
Length 22.238 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.194 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3.135 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20
Width 10.16 mm

Alternate Parts for HY57V283220LT-PI

This table gives cross-reference parts and alternative options found for HY57V283220LT-PI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V283220LT-PI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V283220T-PI Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc HY57V283220LT-PI vs HY57V283220T-PI
HY57V283220LT-SI Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc HY57V283220LT-PI vs HY57V283220LT-SI
Part Number Description Manufacturer Compare
MT48LC4M32B2B5-6:GAT IC 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90, Dynamic RAM Micron Technology Inc HY57V283220LT-PI vs MT48LC4M32B2B5-6:GAT
K4S283233F-FC600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor HY57V283220LT-PI vs K4S283233F-FC600
W9812G21B-6I Synchronous DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp HY57V283220LT-PI vs W9812G21B-6I
MT48LC4M32B2B5-7:GAT IC 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90, Dynamic RAM Micron Technology Inc HY57V283220LT-PI vs MT48LC4M32B2B5-7:GAT
K4S283233F-MP75 Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor HY57V283220LT-PI vs K4S283233F-MP75
K4S283233E-SN750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor HY57V283220LT-PI vs K4S283233E-SN750
K4S283233E-HL600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor HY57V283220LT-PI vs K4S283233E-HL600
MT48LC4M32B2F5-7ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc HY57V283220LT-PI vs MT48LC4M32B2F5-7ES:G
K4M283233H-FG750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor HY57V283220LT-PI vs K4M283233H-FG750
MT48LC4M32LFB5-75M:G Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc HY57V283220LT-PI vs MT48LC4M32LFB5-75M:G

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