Part Details for HY57V561620BST-7 by SK Hynix Inc
Overview of HY57V561620BST-7 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Financial Technology (Fintech)
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Electronic Manufacturing
Entertainment and Gaming
Automotive
Part Details for HY57V561620BST-7
HY57V561620BST-7 CAD Models
HY57V561620BST-7 Part Data Attributes
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HY57V561620BST-7
SK Hynix Inc
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Datasheet
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HY57V561620BST-7
SK Hynix Inc
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 143 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e6 | |
| Length | 22.238 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.194 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.22 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HY57V561620BST-7
This table gives cross-reference parts and alternative options found for HY57V561620BST-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V561620BST-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V54C3256164VHUI6I | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HY57V561620BST-7 vs V54C3256164VHUI6I |
| V54C3256164VHILI7IPC | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HY57V561620BST-7 vs V54C3256164VHILI7IPC |
| TC59SM816BFTL-75 | IC 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | HY57V561620BST-7 vs TC59SM816BFTL-75 |
| MT48LC16M16A1TG-7 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HY57V561620BST-7 vs MT48LC16M16A1TG-7 |
| AS4C16M16S-6TAN | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | HY57V561620BST-7 vs AS4C16M16S-6TAN |
| K4S561632B-TC75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V561620BST-7 vs K4S561632B-TC75 |
| W9825G6CH-75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | HY57V561620BST-7 vs W9825G6CH-75 |
| WED416S16030A7SI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 | Microsemi Corporation | HY57V561620BST-7 vs WED416S16030A7SI |
| MT48LC16M16A2P-75ITTR | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | Micron Technology Inc | HY57V561620BST-7 vs MT48LC16M16A2P-75ITTR |
| V54C3256164VGLI-6PC | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSSOP2-54 | ProMOS Technologies Inc | HY57V561620BST-7 vs V54C3256164VGLI-6PC |