Part Details for HY57V651610ATC-10S by SK Hynix Inc
Overview of HY57V651610ATC-10S by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
10133481-22000BLF | Amphenol Communications Solutions | HPCE CTB VT HEADER 10S | |
10133481-22000ALF | Amphenol Communications Solutions | HPCE CTB VT HEADER 10S | |
10139177-002LF | Amphenol Communications Solutions | HPCE STRADDLE MOUNT Receptacle 2HP28S Omitted 10S |
Part Details for HY57V651610ATC-10S
HY57V651610ATC-10S CAD Models
HY57V651610ATC-10S Part Data Attributes
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HY57V651610ATC-10S
SK Hynix Inc
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Datasheet
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HY57V651610ATC-10S
SK Hynix Inc
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SK HYNIX INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, | |
Pin Count | 54 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e6 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for HY57V651610ATC-10S
This table gives cross-reference parts and alternative options found for HY57V651610ATC-10S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V651610ATC-10S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
VG36641621AT-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | HY57V651610ATC-10S vs VG36641621AT-8 |
UPD4565161G5-A10L-9JF | Synchronous DRAM, 4MX16, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HY57V651610ATC-10S vs UPD4565161G5-A10L-9JF |
UPD4565161G5-A10-9JF | Synchronous DRAM, 4MX16, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HY57V651610ATC-10S vs UPD4565161G5-A10-9JF |
HY57V651610ALTC-10P | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V651610ATC-10S vs HY57V651610ALTC-10P |
HY57V651610TC-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V651610ATC-10S vs HY57V651610TC-8 |
UPD4565161G5-A10AL-9JF | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HY57V651610ATC-10S vs UPD4565161G5-A10AL-9JF |
KM416S4021BT-G8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Samsung Semiconductor | HY57V651610ATC-10S vs KM416S4021BT-G8 |
UPD4565161G5-A10B-9JF | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HY57V651610ATC-10S vs UPD4565161G5-A10B-9JF |
HY57V651610ALTC-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V651610ATC-10S vs HY57V651610ALTC-8 |
HY57V651611TC-8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V651610ATC-10S vs HY57V651611TC-8 |