Part Details for HY5PS1G421M-C4 by SK Hynix Inc
Overview of HY5PS1G421M-C4 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for HY5PS1G421M-C4
HY5PS1G421M-C4 CAD Models
HY5PS1G421M-C4 Part Data Attributes
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HY5PS1G421M-C4
SK Hynix Inc
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Datasheet
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HY5PS1G421M-C4
SK Hynix Inc
DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA63, FBGA-63
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | LFBGA, BGA63,9X11,32 | |
| Pin Count | 63 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 267 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B63 | |
| JESD-609 Code | e0 | |
| Length | 14 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 63 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Equivalence Code | BGA63,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.35 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.014 A | |
| Supply Current-Max | 0.285 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 12.33 mm |
Alternate Parts for HY5PS1G421M-C4
This table gives cross-reference parts and alternative options found for HY5PS1G421M-C4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5PS1G421M-C4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| H5PS2G43EMR-S6 | DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | SK Hynix Inc | HY5PS1G421M-C4 vs H5PS2G43EMR-S6 |
| MT47H512M4THN-25:E | DDR DRAM, 256MX4, CMOS, PBGA63, 9 X 11.5 MM, LEAD FREE, FBGA-63 | Micron Technology Inc | HY5PS1G421M-C4 vs MT47H512M4THN-25:E |
| H5PS2G83AFR-S5 | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | HY5PS1G421M-C4 vs H5PS2G83AFR-S5 |
| MT47H256M8HG-5E:A | DDR DRAM, 256MX8, 0.6ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | HY5PS1G421M-C4 vs MT47H256M8HG-5E:A |
| MT47R256M8EB-25E:C | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, 9 X 12.5 M, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | HY5PS1G421M-C4 vs MT47R256M8EB-25E:C |
| MT47H256M8EB-25:A | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, 9 X 12.5 M, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | HY5PS1G421M-C4 vs MT47H256M8EB-25:A |
| H5PS2G43EMR-S5 | DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | SK Hynix Inc | HY5PS1G421M-C4 vs H5PS2G43EMR-S5 |
| MT47H256M8HG-5EL:A | DDR DRAM, 256MX8, 0.6ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | HY5PS1G421M-C4 vs MT47H256M8HG-5EL:A |
| HYB15T2G402C2F-25F | DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63 | Qimonda AG | HY5PS1G421M-C4 vs HYB15T2G402C2F-25F |
| MT47H512M4-3:E | DDR DRAM, 256MX4, CMOS, PBGA63, 9 X 11.50 MM, LEAD FREE, FBGA-63 | Micron Technology Inc | HY5PS1G421M-C4 vs MT47H512M4-3:E |