Memory
HYB25D128400CT-5
Qimonda AG
Description: DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66

Overview of HYB25D128400CT-5 by Qimonda AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Internet of Things (IoT) Computing and Data Storage

CAD Models for HYB25D128400CT-5 by Qimonda AG
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Part Data Attributes for HYB25D128400CT-5 by Qimonda AG

HYB25D128400CT-5
Qimonda AG
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
QIMONDA AG
Part Package Code
TSOP2
Package Description
TSOP2, TSSOP66,.46
Pin Count
66
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.7 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
200 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
Length
22.22 mm
Memory Density
134217728 bit
Memory IC Type
DDR1 DRAM
Memory Width
4
Moisture Sensitivity Level
1
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX4
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.25 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.5 V
Supply Voltage-Nom (Vsup)
2.6 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. HYB25D128400CT-5
    Qimonda AG
    DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
    VS

Alternate Parts for HYB25D128400CT-5

This table gives cross-reference parts and alternative options found for HYB25D128400CT-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB25D128400CT-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HY5DU28422BT-H DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc HYB25D128400CT-5 vs HY5DU28422BT-H
K4H280438D-TLA2 DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D128400CT-5 vs K4H280438D-TLA2
V58C2128404SAT-8 32M X 4 DDR DRAM, 0.8 ns, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 Mosel Vitelic Corporation HYB25D128400CT-5 vs V58C2128404SAT-8
V58C2128404SAT-7 32MX4 DDR DRAM, 0.75ns, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 Mosel Vitelic Corporation HYB25D128400CT-5 vs V58C2128404SAT-7
KM44L32031BT-GY DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 Samsung Semiconductor HYB25D128400CT-5 vs KM44L32031BT-GY
HY5DV1294022BLTC-10 DDR DRAM, 32MX4, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc HYB25D128400CT-5 vs HY5DV1294022BLTC-10
V58C2128404SAT7 DDR DRAM, 32MX4, 0.1ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 Mosel Vitelic Corporation HYB25D128400CT-5 vs V58C2128404SAT7
V58C2128164-7 DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Mosel Vitelic Corporation HYB25D128400CT-5 vs V58C2128164-7
HYB25D128400AE-7 DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG HYB25D128400CT-5 vs HYB25D128400AE-7
V58C2128404SBLE5I DDR DRAM, 32MX4, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc HYB25D128400CT-5 vs V58C2128404SBLE5I

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