Datasheets
HYB5116405BJ-60 by:

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24

Part Details for HYB5116405BJ-60 by Siemens

Overview of HYB5116405BJ-60 by Siemens

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Part Details for HYB5116405BJ-60

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HYB5116405BJ-60 Part Data Attributes

HYB5116405BJ-60 Siemens
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HYB5116405BJ-60 Siemens EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SOJ
Package Description ,
Pin Count 24
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-J24
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 24
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 4096
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Position DUAL

Alternate Parts for HYB5116405BJ-60

This table gives cross-reference parts and alternative options found for HYB5116405BJ-60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB5116405BJ-60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MCM517405CJ60R EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-26/24 Motorola Semiconductor Products HYB5116405BJ-60 vs MCM517405CJ60R
HM5116405LSI-6 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Hitachi Ltd HYB5116405BJ-60 vs HM5116405LSI-6
KM44C4104ALK-6 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Samsung Semiconductor HYB5116405BJ-60 vs KM44C4104ALK-6
MSM5116405C-60SJ EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB5116405BJ-60 vs MSM5116405C-60SJ
TC5117405CSJ-60 IC 4M X 4 EDO DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM Toshiba America Electronic Components HYB5116405BJ-60 vs TC5117405CSJ-60
UPD42S16405LA-60 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 NEC Electronics Group HYB5116405BJ-60 vs UPD42S16405LA-60
K4E170411C-BL600 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Samsung Semiconductor HYB5116405BJ-60 vs K4E170411C-BL600
TMS416409-60DJ 4MX4 EDO DRAM, 60ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Texas Instruments HYB5116405BJ-60 vs TMS416409-60DJ
MT4C4M4E9DJ-6TR EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Micron Technology Inc HYB5116405BJ-60 vs MT4C4M4E9DJ-6TR
K4E160411C-BC600 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Samsung Semiconductor HYB5116405BJ-60 vs K4E160411C-BC600
Part Number Description Manufacturer Compare
MSM5117405F-50SJ EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB5116405BJ-60 vs MSM5117405F-50SJ
MSM5116400C-70SJ Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB5116405BJ-60 vs MSM5116400C-70SJ
MSM5117400C-70SJ Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB5116405BJ-60 vs MSM5117400C-70SJ
TC5117400BSJ-60 IC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM Toshiba America Electronic Components HYB5116405BJ-60 vs TC5117400BSJ-60
TC5116400CSJ-60 IC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM Toshiba America Electronic Components HYB5116405BJ-60 vs TC5116400CSJ-60
HYB3116400BJ-60 Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO26, 0.300 INCH, PLASTIC, SO-26 Siemens HYB5116405BJ-60 vs HYB3116400BJ-60
MSM51V16400D-50SJ Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB5116405BJ-60 vs MSM51V16400D-50SJ
TC5117400CSJ-60 IC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM Toshiba America Electronic Components HYB5116405BJ-60 vs TC5117400CSJ-60
MSM51V16405FSL-70SJ EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 LAPIS Semiconductor Co Ltd HYB5116405BJ-60 vs MSM51V16405FSL-70SJ
MSM51V17405F-70SJ EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB5116405BJ-60 vs MSM51V17405F-70SJ

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